IRFR120ATM Allicdata Electronics
Allicdata Part #:

IRFR120ATM-ND

Manufacturer Part#:

IRFR120ATM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 8.4A DPAK
More Detail: N-Channel 100V 8.4A (Tc) 2.5W (Ta), 32W (Tc) Surfa...
DataSheet: IRFR120ATM datasheetIRFR120ATM Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs (Max): --
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
FET Feature: --
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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The IRFR120ATM series of transistors is a popular choice for power management applications in the consumer electronics industry. Thanks to its high-speed switching performance, good sub-micron leakage performance, good capacitive immunity, and low power dissipation, the IRFR120ATM series is the preferred option for many consumer electronics products. In this article, we will discuss the application field and working principles of the IRFR120ATM series.

The IRFR120ATM series is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) specifically designed for high-speed switching applications. It belongs to the single gate type MOSFETs, which are characterized by having a single gate electrode. This simplifies the structure of the transistor and allows for higher operation speed. The device has a wide operational range and low power dissipation, making it suitable for use in high-power switching circuits.

The IRFR120ATM is capable of operating in a variety of different environments, ranging from consumer electronics to industrial applications. It is commonly used in consumer electronic applications such as power supplies, inverters, chargers, and converters. Its low-power dissipation, submicron leakage performance, and high-speed switching capability make it ideal for consumer electronics operations. The device is also suitable for use in industrial applications such as motor controllers, audio amplifiers, and motor control circuits.

The IRFR120ATM series consists of a number of different components. These include a metal-oxide-semiconductor field-effect transistor, a metal-oxide-semiconductor logic gate, a metal-insulator-semiconductor logic gate, and a Schottky barrier transistor. Each component serves a different purpose in the operation of the device. First, the metal-oxide-semiconductor field-effect transistor is primarily responsible for switching the power applied to the circuit. The metal-oxide-semiconductor logic gate reduces power dissipation and improves switching times. The metal-insulator-semiconductor logic gate allows for analog or digital control of the circuit. Finally, the Schottky barrier transistor allows for high-power switching applications.

The IRFR120ATM series operates by controlling the current flow through the device. Once the voltage applied to the gate reaches a certain threshold, the device will be switched on and current will flow through the device. The current flow depends on the amount of voltage applied to the gate. The device will remain on as long as the gate voltage remains above the necessary threshold. When the voltage is lowered below the threshold, the device will switch off and the current will stop flowing.

In summary, the IRFR120ATM series is a popular and widely used MOSFET for high-speed switching applications. The device consists of several components that work together to allow current to flow through the circuit and to control the amount of current flowing. The device operates by controlling the current flow through the device as the voltage applied to the gate reaches a certain threshold. This device is widely used in consumer electronics applications and industrial applications such as motor controllers and audio amplifiers.

The specific data is subject to PDF, and the above content is for reference

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