Allicdata Part #: | IRFR1010ZTRRPBF-ND |
Manufacturer Part#: |
IRFR1010ZTRRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 42A DPAK |
More Detail: | N-Channel 55V 42A (Tc) 140W (Tc) Surface Mount D-P... |
DataSheet: | IRFR1010ZTRRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 42A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2840pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 140W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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,IRFR1010ZTRRPBF Application Field and Working Principle
The IRF1010ZTRRPBF is a 10-amp, 100-volt, single N-channel HEXFET Power MOSFET from International Rectifier. This device provides high power efficiency and consumes low on-resistance, fast switching speeds, and low gate charge with low input capacitance. It is designed for high-frequency switching applications including automotive, communications, consumer, and industrial.
Application Field
The IRF1010ZTRRPBF is suitable for a variety of power management applications including power supplies, rectifiers, converters, inverters, and high-efficiency motor control designs. It is also suitable for use in high-speed, low-voltage level shifters and general purpose high-frequency switching applications. This device is used in automotive, communications, consumer, and industrial applications.
Working Principle
The IRF1010ZTRRPBF is a single N-channel MOSFET that works by allowing a voltage difference or potential to be applied across its gate and drain terminals. When a voltage potential is applied across the gate and drain, it induces an electric field that creates an electron flow from the source to the drain terminal. This electron flow forms an electric current that can be used to control the power supply of a device or circuit. The size of the electric current is determined by the voltage difference between the gate and drain terminals.
The IRF1010ZTRRPBF has a very low on-resistance, fast switching speeds, and low gate charge. This device also has a low input capacitance and can handle up to 10 amps of continuous current. This makes it very efficient and is well suited for high-frequency switching applications. The low on-resistance also helps reduce power dissipation and allows the device to be used in higher current applications.
Conclusion
The IRF1010ZTRRPBF is a 10-amp, 100-volt, single N-channel HEXFET Power MOSFET from International Rectifier. This device provides high power efficiency and consumes low on-resistance, fast switching speeds, and low gate charge with low input capacitance. The IRF1010ZTRRPBF is suitable for a variety of power management applications including power supplies, rectifiers, converters, inverters, and high-efficiency motor control designs. It is also suitable for use in high-speed, low-voltage level shifters and general purpose high-frequency switching applications. This device is used in automotive, communications, consumer, and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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