IRFR010TRR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRFR010TRR is an N-channel FET that is highly efficient, reliable and easy to use in a wide range of applications. It is an ideal choice for many high frequency and radio frequency applications as well as digital and analog signal processing. It has a drain-to-source saturation voltage of 0.95V, a junction-to-ambient thermal resistance of 0.4 C/W, and a breakdown voltage of 10V.

The IRFR010TRR is a single-gate FET that is designed to provide superior high-frequency and low-noise performance. It is constructed of N-type material and has an extremely low threshold voltage of 0.6 V. It is also designed to operate at gate-source voltages up to 10V, making it particularly suitable for high-gain and high-frequency applications requiring both positive and negative gate-source voltage control. The FET also offers excellent turn-on and turn-off speed, which makes it especially well suited for radio frequency applications.

The basic working principle of the IRFR010TRR is based on the principle of the Field Effect Transistor (FET). In a FET, the potential difference between the gate and the source terminal controls the flow of electrons between the source to the drain. The transfer of electrons is due to the applied voltage that causes the electrons to disperse or accumulate in a region of the semiconductor material, thus creating a potential barrier or a conducting channel.

To achieve efficient performance, the IRFR010TRR utilizes a special double-gate configuration which provides an increased amount of gate control. This double-gate configuration works much like a MOSFET but with only one gate. This means that the amount of gate control is increased due to more electrons being able to accumulate in a very thin layer of the P type semiconductor material. With this increased gate control, the FET can have a much wider range of gate-source voltages, resulting in a much higher gain and voltage transfer capability.

The IRFR010TRR is also designed to be more reliable than other FETs due to the double-gate nature of its design. By having two gates instead of one, the chances of an electrical short between the two gates is significantly reduced. This improved reliability can be beneficial in applications requiring long-term operation and high levels of performance.

The IRFR010TRR is a great choice when looking for a reliable, efficient, and high-performance single gate FET. Its unique double-gate design and superior gate-source voltage control allows it to be used in many applications requiring both digital and analog signal processing. The FET also offers excellent speed and reliability making it a perfect choice for many high and radio frequency applications.

The specific data is subject to PDF, and the above content is for reference