| Allicdata Part #: | IRFR310-ND |
| Manufacturer Part#: |
IRFR310 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 400V 1.7A DPAK |
| More Detail: | N-Channel 400V 1.7A (Tc) 2.5W (Ta), 25W (Tc) Surfa... |
| DataSheet: | IRFR310 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 170pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 3.6 Ohm @ 1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1.7A (Tc) |
| Drain to Source Voltage (Vdss): | 400V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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.IRFR310 is a N-Channel MOSFET transistor, and is widely used in electronics due to its low cost, low gate drive power, and excellent performance. In this article, we will look at the application field and working principle of the IRFR310.
The IRFR310 is most commonly used in power amplifier circuits and power supply designs. It is often used as a driver transistor to drive a large load or as a switch in the power supply or amplifier circuit. It is also used in active filter circuits, logic circuits, and timing circuits. In addition, it can be used to control the current in linear or switching voltage regulators.
The IRFR310 is a voltage controlled N-channel depletion mode MOSFET. It features a depletion-mode design which means that the drain-to-source channel will be “on” by default. To turn the device “off”, a positive voltage needs to be applied to the gate. The threshold voltage, or the the voltage that needs to be applied to the gate for the device to turn “on”, is typically in the range of +1 to +4 volts. The maximum drain-source voltage (VDS) for the IRFR310 is 250 volts, and the maximum drain current (ID) is 3 Amps.
The IRFR310 can be used as a switch to control a large load, or as a driver transistor to control smaller loads. When used as a switch, the gate voltage can be applied to turn the device “on” and “off”, thus controlling the current going through the load. When used as a driver transistor, the current through the load will be controlled by the amount of gate current being applied.
The IRFR310 has many advantages over other transistors due to its low gate charge and its fast switching speed. Its low gate charge means that it requires less energy to turn the device “on” or “off” and thus is more energy efficient. Its fast switching speed means that the current will respond instantly when the gate voltage is changed, making it useful for pulse and timing applications.
In conclusion, the IRFR310 is a widely used N-Channel MOSFET transistor that is used in many power amplifier and power supply designs. It operates on the principle of voltage control, where a positive voltage must be applied to the gate in order for the device to turn “on”, and a negative voltage must be applied to the gate to turn the device “off”. Its low gate charge and fast switching speed make it an ideal choice for applications requiring variable current control or those requiring pulse or timing applications.
The specific data is subject to PDF, and the above content is for reference
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IRFR310 Datasheet/PDF