| Allicdata Part #: | IRFR014TR-ND |
| Manufacturer Part#: |
IRFR014TR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 60V 7.7A DPAK |
| More Detail: | N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surfac... |
| DataSheet: | IRFR014TR Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 300pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 200 mOhm @ 4.6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 7.7A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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IRF1404TR is a product of Powerex that belongs to the family of insulated gate field effect transistors (IGFETs). It is a single-pole, double-throw (SPDT) field effect transistor with a drain-source voltage of 200 volts and a drain current rating of 18A peak. It is a low on-resistance type with a low internal capacitance. It is suitable for applications such as motor control, switch mode power supply (SMPS), and power switching in the audio, video and telecommunications industries.
This device is designed to provide high power transfer and minimal power losses. It has a low gate-source voltage (Vgs) of 0.3 volts and a maximum gate-drain voltage of 20V. It also has high switching speeds, making it suitable for high efficiency and high switching frequency applications. In addition, the device is protected against electrostatic discharge (ESD).
The IRF1404TR is a four-terminal device, with the terminals arranged in a row. The source terminal is to the left of the gate terminal, and the drain is to the right of the gate. An external bias voltage is applied between the gate and source terminals to control the flow of current between drain and source. When Vgs is less than the threshold voltage (Vth), no channel is formed, and the device is off. When Vgs is greater than Vth, the channel is formed, and current starts to flow.
The device can operate in two modes – the linear mode, where Vds is within the specified drain-source voltage and current follows the applied voltage; and the saturation mode, where Vds is greater than the drain-source voltage and current can flow without losses. The drain current is controlled by the gate-source voltage, and the power dissipation is controlled by the drain-source voltage.
The IRF1404TR is suited for applications that require low noise, low distortion, and high efficiency. It is an excellent choice for motor control applications, where it can provide a high rate of speed control and power conversion efficiency. It is also suitable for switching applications in audio, video, and telecommunications systems.
In summary, the IRF1404TR is a powerful, reliable and efficient insulated gate field effect transistor. It is suitable for high power transfer and low losses, while providing high switching speeds, low noise, and low distortion. It is an ideal choice for both motor control and power switching applications. With its strong protection against ESD, the device is designed to provide long-term reliability in harsh environments.
The specific data is subject to PDF, and the above content is for reference
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IRFR014TR Datasheet/PDF