IRFR014TR Allicdata Electronics
Allicdata Part #:

IRFR014TR-ND

Manufacturer Part#:

IRFR014TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 7.7A DPAK
More Detail: N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surfac...
DataSheet: IRFR014TR datasheetIRFR014TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF1404TR is a product of Powerex that belongs to the family of insulated gate field effect transistors (IGFETs). It is a single-pole, double-throw (SPDT) field effect transistor with a drain-source voltage of 200 volts and a drain current rating of 18A peak. It is a low on-resistance type with a low internal capacitance. It is suitable for applications such as motor control, switch mode power supply (SMPS), and power switching in the audio, video and telecommunications industries.

This device is designed to provide high power transfer and minimal power losses. It has a low gate-source voltage (Vgs) of 0.3 volts and a maximum gate-drain voltage of 20V. It also has high switching speeds, making it suitable for high efficiency and high switching frequency applications. In addition, the device is protected against electrostatic discharge (ESD).

The IRF1404TR is a four-terminal device, with the terminals arranged in a row. The source terminal is to the left of the gate terminal, and the drain is to the right of the gate. An external bias voltage is applied between the gate and source terminals to control the flow of current between drain and source. When Vgs is less than the threshold voltage (Vth), no channel is formed, and the device is off. When Vgs is greater than Vth, the channel is formed, and current starts to flow.

The device can operate in two modes – the linear mode, where Vds is within the specified drain-source voltage and current follows the applied voltage; and the saturation mode, where Vds is greater than the drain-source voltage and current can flow without losses. The drain current is controlled by the gate-source voltage, and the power dissipation is controlled by the drain-source voltage.

The IRF1404TR is suited for applications that require low noise, low distortion, and high efficiency. It is an excellent choice for motor control applications, where it can provide a high rate of speed control and power conversion efficiency. It is also suitable for switching applications in audio, video, and telecommunications systems.

In summary, the IRF1404TR is a powerful, reliable and efficient insulated gate field effect transistor. It is suitable for high power transfer and low losses, while providing high switching speeds, low noise, and low distortion. It is an ideal choice for both motor control and power switching applications. With its strong protection against ESD, the device is designed to provide long-term reliability in harsh environments.

The specific data is subject to PDF, and the above content is for reference

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