IRFR014TRPBF Allicdata Electronics
Allicdata Part #:

IRFR014TRPBFTR-ND

Manufacturer Part#:

IRFR014TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 7.7A DPAK
More Detail: N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surfac...
DataSheet: IRFR014TRPBF datasheetIRFR014TRPBF Datasheet/PDF
Quantity: 2000
Stock 2000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRFR014TRPBF is a type of power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is often used in high power switching and circuit protection applications, as it is capable of dissipating large amounts of power without any kind of physical damage.

The basic principle of operation for any power MOSFET is simple. An input voltage is applied to the gate terminal, which attracts majority carriers (electrons in n-type devices and holes in p-type devices) through the gate dielectric. These carriers then form a conducting channel between source and drain terminals. This is known as the inversion layer, which allows current to flow from source to drain.

In order to ensure a high dielectric strength, power MOSFETs must be designed with a very thin gate oxide. IRFR014TRPBF is designed with a very thin gate oxide (1.2 nm) to help reduce the on-resistance of the device and improve its power dissipation. It has an operating temperature range of -55?C to 175?C and can dissipate up to 4.5W of power.

The IRFR014TRPBF is a single power MOSFET which can drive a wide variety of loads. It can be used in applications such as motor control, power switching, and power conversion. Additionally, it can be used in loads that require high frequency switching and/or low gate capacitance. The device is also suitable for high temperature environments, such as automotive engine compartments.

Due to its high reliability and low on-resistance, the IRFR014TRPBF can be used in a variety of applications. In DC motor control applications, it is suitable for switching up to 1.4A when controlling low voltage motors. It is also used in power conversion circuits, such as DC-DC converters, AC induction motors, and SMPS circuits. Furthermore, it is used to protect against short circuits, overcurrent, and overvoltage.

In summary, the IRFR014TRPBF power MOSFET is an ideal choice for a wide variety of applications, including motor control, power switching, and protection circuits. It is designed with a very thin gate oxide for enhanced power dissipation and has an operating temperature range of -55?C to 175?C. Its high reliability and low on-resistance make it suitable for many different types of loads and environments.

The specific data is subject to PDF, and the above content is for reference

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