| Allicdata Part #: | IRFR020PBF-ND |
| Manufacturer Part#: |
IRFR020PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 60V 14A DPAK |
| More Detail: | N-Channel 60V 14A (Tc) 2.5W (Ta), 42W (Tc) Surface... |
| DataSheet: | IRFR020PBF Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 42W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 640pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 100 mOhm @ 8.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IRFR020PBF is an advanced power MOSFET that can be specifically designed for a wide range of applications. This MOSFET is rated for a total of 600 volts and has a current of 120 mA, making it an ideal choice for many applications. It is also designed with a low gate threshold voltage, making it easier to control.
IRFR020PBF has two primary advantages. First, its on-resistance is low, making it simple to use for switching. Secondly, it is compatible with a wide range of logic levels, making it a flexible solution for any application. This MOSFET is suitable for use in a wide range of circuits, including high voltage and low voltage, low frequency and high frequency, and digital and analog.
It is important to understand the basic working principle of a MOSFET before discussing the application field of IRFR020PBF. MOSFETs consist of four terminals, which are drain, gate, source, and body. The gate and source are connected by a p-n junction diode, while the drain and body are connected via a n-channel material. When voltage is applied to the gate of the MOSFET, it extracts negative charges from the gate and injects positive charges into the channel. This induces a voltage difference between the source and the drain, causing current to flow from the source to the drain of the MOSFET.
IRFR020PBF can be used in a variety of applications. It is used in power supply circuits, such as DC-DC converters, voltage regulators, and battery chargers. It can also be used for high-speed switching applications, such as PWM motors controllers, DC motors controllers, and other switching circuits. The MOSFET can also be used in audio applications, such as amplifiers, signal processing, and loudspeaker systems.
Additionally, IRFR020PBF is a useful device for medical applications. It can be used to drive LEDs for biomedical display applications, and also for signal conditioners and signal generators.The IRFR020PBF is an advanced power MOSFET with a range of advantages, making it a reliable device for a variety of applications. Its low on-resistance, high current, and compatibility with a wide range of logic levels make it ideal for use in power supplies, switching circuits, audio circuits, and medical devices.
The specific data is subject to PDF, and the above content is for reference
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IRFR020PBF Datasheet/PDF