IRFR020TR

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 42W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	640pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	25nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	100 mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	14A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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IRFR020TR Application Field and Working Principle

The IRFR020TR is an N-channel MOSFET made using the extremely popular and widely used Trench MOSFET technology. It is suitable for use in a wide range of applications, such as switch-mode power supplies, high-efficiency DC-DC converters, power management circuits, automotive, and general purpose amplifier designs. It is also a very reliable device with very low gate losses, making it suitable for high-frequency switching applications. This type of MOSFET is an insulated-gate field effect transistor (IGFET), also known as an insulated-gate bipolar transistor (IGBT). It is different from other types of MOSFETs due to its insulated-gate construction. The insulated gate is composed of two layers of dielectric embedded between two sets of metal gates. This feature prevents gate current from flowing from the source to the drain as it does with other types of MOSFETs, resulting in a much more efficient and reliable device. The IRFR020TR has an on-resistance of 0.021Ω, an output capacitance of 2.5pF, and a maximum drain-source voltage of only 20V. It has a threshold voltage of 2.5V, and a maximum temperature of 150°C. It is rated for a maximum of 8A.The device is typically used in circuit applications to control the power state of a device, typically in high-frequency switching applications. The device is designed to act as a low-resistance conductor when its gate voltage is at +2.5V, and when it is at 0V, it operates as an insulator. This property of the device allows it to be used in numerous types of applications, such as power supplies, DC-DC converters, and power management controls.The IRFR020TR also has an extremely fast switching speed. The device can switch up to a maximum of 100kHz, making it suitable for high-frequency applications. This property of the device will also reduce switching losses and improve the efficiency of the circuit. The device also features excellent thermal stability, with a maximum junction temperature of 150°C. As the device is insulated-gate, it has very low gate losses, meaning that it can be used in high-power applications without a significant rise in temperature. In conclusion, the IRFR020TR is a highly reliable and efficient insulated-gate MOSFET that is suitable for use in a variety of applications, such as switch-mode power supplies, DC-DC converters, power management controls, and general purpose amplifier designs. Its fast switching speed makes it ideal for applications requiring high-frequency operation. Its low gate losses mean that it can handle up to 8A of current, and it has an excellent thermal stability with a maximum junction temperature of 150°C.

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