| Allicdata Part #: | IRFR024NTRR-ND |
| Manufacturer Part#: |
IRFR024NTRR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 55V 17A DPAK |
| More Detail: | N-Channel 55V 17A (Tc) 45W (Tc) Surface Mount D-Pa... |
| DataSheet: | IRFR024NTRR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 45W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 370pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 75 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The IRFR024NTRR is an n-channel metal oxide field effect transistor designed for high-frequency switching applications. It can operate at an operating temperature range of -55 to 175 degree Celsius and can handle a wide range of currents, from 10 mA to 5A. The datasheet lists a maximum voltage of 600V. It has high input impedance, low on-resistance, fast switching time and low gate charge.
A field effect transistor (FET) is a semiconductor device which uses groves in the transits source and drain to create an electric field which is applied to the portion of the device between source and drain. This electric field is used to modulate the conductance of the channel, as well as its output voltage. FETs are available in both n-channel and p-channel types, however the IRFR024NTRR is an n- channel type, meaning it is conductive when a positive voltage is applied to the gate.
The working principle of the IRFR024NTRR is as follows: When a positive voltage is applied to the gate of the transistor, the electric field generated causes the electrons to drift from the source to the drain, permitting current flow through the channel. This type of transistor is known as an enhancement type, because the channel conductance is only modulated when a positive voltage is applied to the gate. As the gate pertains a negative voltage, the conductance of the channel is reduced.
The IRFR024NTRR is commonly used in applications such as switching power supplies, DC-DC converters, automotive electronics and RF applications. Its high input impedance and fast switching speed make it ideal for switching power supply designs. Its low on-resistance also makes it well suited for controlling LED displays and other applications which require precise current control. Additionally, its high withstand voltage makes it ideal for motor-control designs, where it can act as a high-side switch.
In summary, the IRFR024NTRR is an n-channel metal oxide field effect transistor which is designed for high-frequency switching applications. It has a wide operating temperature range and can handle current levels ranging from 10mA to 5A. Its high input impedance, low on-resistance, fast switching time and low gate charge make it ideal for a wide range of applications, such as high-side switches and LED display control.
The specific data is subject to PDF, and the above content is for reference
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IRFR024NTRR Datasheet/PDF