| Allicdata Part #: | IRFR024TRL-ND |
| Manufacturer Part#: |
IRFR024TRL |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 60V 14A DPAK |
| More Detail: | N-Channel 60V 14A (Tc) 2.5W (Ta), 42W (Tc) Surface... |
| DataSheet: | IRFR024TRL Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 42W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 640pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 100 mOhm @ 8.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The IRFR024TRL FET (Field Effect Transistor) is a single N-channel Field Effect Transistor that uses either a P-channel or an N-channel MOSFET as its primary switching element. It is one of the most commonly used components in a variety of circuit applications. The IRFR024TRL is capable of high-speed switching and low power consumption, making it an ideal choice for high-performance and low-power applications.
The IRFR024TRL is designed to provide a variety of features, such as fast switching speeds, low power consumption, and low on-resistance. This makes the IRFR024TRL an ideal choice for a wide range of applications. It is particularly useful for applications such as power supplies, power conversion, switching power amplifiers, and RF switching.
The IRFR024TRL operates on the principle of electrostatic conduction. A voltage applied to the gate of the transistor creates a field-effect at the boundary between the source and the drain of the device. This field-effect causes current flow through the channel between the source and the drain, causing a voltage drop between the source and the drain. This voltage drop is the transistor\'s power gain, which can be controlled by adjusting the gate voltage.
The IRFR024TRL is capable of very fast switching speeds, as the device has a very low input capacitance. This enables the device to rapidly switch between conducting and non-conducting states, which is essential for high-frequency applications. It also has a low gate-to-drain capacitance, which helps to minimize switching losses. This makes the IRFR024TRL an ideal choice for RF and high-speed switching applications.
The IRFR024TRL also has a number of features that make it ideal for power conversion applications. Its low drain-to-source on-resistance means that it can provide a very efficient power conversion ratio. It is also capable of operating in an environment with a wide range of temperature and voltage ranges, and it is resistant to damage due to electrostatic discharge. This makes the IRFR024TRL ideal for streamlining power management and reducing energy consumption in an efficient and economic way.
The IRFR024TRL is a high-performance device that is capable of providing a wide range of features and capabilities. Its low power consumption, fast switching speeds, and low on-resistance make it an ideal choice for a wide range of high-speed switching and power conversion applications. Its capability of operating in a wide range of temperatures and voltages as well as its robustness to ESD damage make it especially useful for more demanding applications.
The specific data is subject to PDF, and the above content is for reference
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IRFR024TRL Datasheet/PDF