IRFR120 Allicdata Electronics
Allicdata Part #:

IRFR120IR-ND

Manufacturer Part#:

IRFR120

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 7.7A DPAK
More Detail: N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Surfa...
DataSheet: IRFR120 datasheetIRFR120 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 270 mOhm @ 4.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFR120 is a type of n-channel field-effect transistor (FET). It is also a member of a family of FETs known as Metal Oxide Semiconductor field effect transistors (MOSFET). This type of transistor is composed of an insulated gate, a source, and a drain. The insulated gate is used to control the flow of current between the source and the drain by varying the voltage between the gate and the source.

The IRFR120 is a very popular choice for a variety of power supply and switching applications. It is capable of handling up to approximately 47 watts of continuous power, and is available in a variety of packages, including TO-247, TO-220, and TO-252. Additionally, the IRFR120\'s excellent performance characteristics make it a good choice for low voltage, high current applications.

The IRFR120 is a fairly easy to use FET. It can be used in a variety of applications, such as motor controllers, switching power supplies, and DC-DC converters. Additionally, it has a low drain-source on-resistance, making it suitable for high-current applications such as switching regulators and DC-DC converters. Furthermore, it has a very low gate charge, which makes it a good choice for applications where the gate voltage is frequently changing.

The working principle of the IRFR120 is quite simple. When a voltage is applied between the source and the drain, current flows from the source to the drain through the channel of the transistor. The amount of current flowing depends on the amount of voltage applied. If the voltage is increased, more current flows through the channel. Furthermore, by applying a voltage to the gate, the amount of current flowing between the source and the drain can be controlled.

The IRFR120 is an easy to use and reliable FET, making it a popular choice for a variety of power supply and switching applications. Its excellent performance characteristics, low gate charge, and relatively low drain-source on-resistance make it a good choice for high current applications. Additionally, the simple working principle of the IRFR120 makes it easy to understand and use for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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