| Allicdata Part #: | IRFR214-ND |
| Manufacturer Part#: |
IRFR214 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 250V 2.2A DPAK |
| More Detail: | N-Channel 250V 2.2A (Tc) 2.5W (Ta), 25W (Tc) Surfa... |
| DataSheet: | IRFR214 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 140pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 8.2nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 2 Ohm @ 1.3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2.2A (Tc) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRF214 is a part of a standard family of N-channel power mosfets developed by International Rectifier. These mosfets are designed to withstand substantial voltage, providing high current levels through a single device. They feature low on-resistance values, superior thermal stability and low gate charge, making them particularly suitable for applications that require switching low on-resistance and high current levels. In this article, we will discuss the application field and working principle of the IRF214.
Application Field
The IRF214 is primarily used as a power switch in a variety of high-current DC applications, such as electric vehicles, battery powered devices, and renewable energy systems. It is also widely used in motor control circuits, where it can switch high currents with fast on/off response and help reduce energy losses. In addition, it is often used in power supplies, audio amplifiers, and in mobile communication networks.
Working Principle
The IRF214 is an enhancement type MOSFET, which means that it requires a positive voltage applied to its gate to turn it on. When the positive voltage is applied to the gate, the electric field created attracts electrons from the N-type semiconductor, which creates a channel of electrons between the source and the drain. This channel allows the current to flow between the source and the drain and thus, the MOSFET is turned on. When the gate voltage is removed, the electrons are repelled and the channel is blocked, turning the MOSFET off.
Advantages
The IRF214 has many advantages compared to other MOSFETs. It has low on-resistance values, making it ideal for applications that require low on-resistance and high current. It also has superior thermal stability and low gate charge, which helps to minimize power losses. In addition, it is designed to withstand higher voltage levels, which makes it suitable for high-power applications.
Conclusion
The IRF214 MOSFET is a popular choice for a variety of high-current DC applications due to its low on-resistance characteristics and high current capabilities. It is also known for its reliability, thermal stability, and low gate charge. Its high voltage withstand capability makes it well suited for a wide range of applications, including electric vehicles and renewable energy systems.
The specific data is subject to PDF, and the above content is for reference
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IRFR214 Datasheet/PDF