IRFR224TR Allicdata Electronics
Allicdata Part #:

IRFR224TR-ND

Manufacturer Part#:

IRFR224TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 250V 3.8A DPAK
More Detail: N-Channel 250V 3.8A (Tc) 2.5W (Ta), 42W (Tc) Surfa...
DataSheet: IRFR224TR datasheetIRFR224TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRFR224TR is a single n-channel power MOSFET made by Infineon Technologies. This particular MOSFET is designed to minimize on-state resistance, switching losses and is ideal for energy-saving applications in which low gate charge is required. It has an RDS(ON) of 0.0369 ohms, a maximum drain source voltage of 60V, and a maximum continuous drain current of 11A.

The IRFR224TR MOSFET is commonly used in the following applications:

  • DC-DC converters (including buck, boost, SEPIC, and others)
  • Switch mode power supplies
  • Audio amplifiers
  • Motor control circuits

The switches used in these applications will usually require very fast switching speeds to provide optimal performance. The IRFR224TR MOSFET meets this requirement, as it has very fast switching speeds (typically 10ns for rise/fall times). It also has a very low gate-to-source capacitance of 2.5pF, which ensures minimal ringing and an optimized signal integrity.

MOSFETs are three terminal devices that have a source, drain and gate. In the case of the IRFR224TR MOSFET, when a high voltage is applied to the gate, (typically 10V) the MOSFET will turn on. The high gate voltage enables a large amount of current to be passed from the source to the drain, which is known as an “on” status. When the voltage on the gate is lowered, the MOSFET will turn off, meaning that no current is passed from the source to the drain, resulting in an “off” status.

In order to enable the IRFR224TR MOSFET to switch quickly, a low-value gate resistor is used. This allows the MOSFET to switch very quickly, further enhancing its performance. In order to ensure that the MOSFET is effectively switched off, a snubber circuit or a reverse-biased diode may also be used.

The IRFR224TR MOSFET can also be used in situations where the voltage on the drain must be kept below a specific value. This is achieved by using a resistor connected from the drain to the source. The resistor is chosen so that when the MOSFET is on it will limit the voltage across the resistor to a specific value, thus ensuring that the voltage at the drain remains below a specific value.

Overall, the IRFR224TR is a powerful and versatile MOSFET. Its low on-state resistance and efficient switching capabilities make it an ideal choice for applications that require fast switching, improved power efficiency and optimized signal integrity. By pairing this MOSFET with an appropriate voltage source, you can ensure that you get the most out of it in your design.

The specific data is subject to PDF, and the above content is for reference

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