IRFR320 Allicdata Electronics
Allicdata Part #:

IRFR320-ND

Manufacturer Part#:

IRFR320

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 400V 3.1A DPAK
More Detail: N-Channel 400V 3.1A (Tc) 2.5W (Ta), 42W (Tc) Surfa...
DataSheet: IRFR320 datasheetIRFR320 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRF320 is an enhancement-mode power MOSFET, a kind of Field Effect Transistor (FET). It is composed of vertical conductive channels in the source and drain regions, which are formed by large amounts of positively charged ion implantation. IRF320 operate as a voltage-controlled switch with typical breakdown voltage of 40V and drain current of 3A.

MOSFETs are widely used in electronic systems and electronic circuits in consumer, industrial and military applications. Their main usage range from switching, amplifying and signal processing, to interfacing to power electronics. The advantages in application of IRF320 are fast switching speed and low gate to pinch-off voltage, achieving high efficiency and low power dissipation.

IRF320 works on the principle of providing an electric field between the gate and the source. A voltage applied to the gate will cause the electrons in the channel between the source and drain regions to avalanche and form a channel, which allows current to flow between the source and drain terminals. IRF320 is able to operate in conditions of low voltage and low power, which makes it suitable for high-frequency applications, as well as low-voltage analog and power applications.

In addition, IRF320 has excellent electrical characteristics and dependable operation. It offers fast switching and low leakage current, both of which contribute to the device’s energy efficiency. IRF320 also has the capacity to operate in the low-power domain, which makes it preferable for applications which require low current or low voltage. IRF320 also has a higher thermal capacity and improved tolerance of mechanical stress than other similar devices, making it more reliable for long term operation and applications.

IRF320 is suitable for use in applications with a supply voltage up to 40V and current up to 3A. It is suitable for use in low voltage and low current applications, and it is also suitable for high frequency applications. Typical applications for IRF320 include switching power supplies, RF applications, junction field-effect transistor (JFET) circuits and amplified circuits, as well as light control, current regulation, voltage regulation, current control and temperature control.

In summary, IRF320 is a power MOSFET, suitable for use in low voltage and low current applications. It works on the principle of providing an electric field between the gate and the source, and has excellent electrical characteristics and dependable operation. It offers fast switching and low leakage current, and is suitable for use in applications with a supply voltage up to 40V and current up to 3A. Typical applications include switching power supplies, RF applications, JFET circuits and amplified circuits, as well as light control, current regulation, voltage regulation, current control and temperature control.

The specific data is subject to PDF, and the above content is for reference

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