IRFR320TR Allicdata Electronics
Allicdata Part #:

IRFR320TR-ND

Manufacturer Part#:

IRFR320TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 400V 3.1A DPAK
More Detail: N-Channel 400V 3.1A (Tc) 2.5W (Ta), 42W (Tc) Surfa...
DataSheet: IRFR320TR datasheetIRFR320TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRFR320TR is a 120 V N-channel metal oxide field effect transistor (FET) manufactured by International Rectifier Corporation, a subsidiary of Infineon Technologies. It belongs to the single FET family, which is composed of only one FET as the active element. Generally, it is used in applications as commercial, industrial and automotive.

The IRFR320TR is usually used as a switch controlling the current (in amps) and voltage (in volts). It is designed for low power and low voltage applications, such as power supply and other linear or switching loads. The size of the FET is very small, and the power dissipation is minimum.

The operating principle of the IRFR320TR is based on the fact that the voltage applied to the gate controls a conducting channel between the source and drain. The conductivity of this channel is variable, thus allowing a variable flow of electrons between the source and drain, corresponding to the current flowing in the circuit.

The IRFR320TR maximizes its linear operation range, minimizes switching time, and improves overall system performance. In applications, it can be used for power supply and other linear or switching loads.

Thanks to its low On-Resistance (RDS(ON)) and also the low Leakage—the amount of current that leaks out of the FET when it is in the off state—the IRFR320TR minimizes power dissipation in the system, thus increasing energy efficiency. Additionally, it has a low threshold voltage and is protected against ESD up to 100V HBM.

The IRFR320TR can be used for a wide range of applications, ranging from power supplies to discrete power switches. Commercial, industrial, and automotive applications are some of the most suitable for this FET. It can be used as a power switch for automotive electronic throttle controls, fuel injectors, as well as for industrial applications. It can also be used in lighting and power supplies with high power density. Another important field its application is HID lamps, LED drivers, and LED down-light drivers. In all those cases, the use of the IRFR320TR allows the optimization of energy efficiency and reduces the system costs.

The specific data is subject to PDF, and the above content is for reference

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