IRFR3418TRPBF

Vgs(th) (Max) @ Id:	5.5V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.8W (Ta), 140W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3510pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	94nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	14 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	70A (Tc)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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IRFR3418TRPBF is a high voltage MOSFET that is used in many applications due to its low cost, good current carrying capacity, low resistance and good switching performance. This MOSFET type is typically used in power switching, voltage regulation and motor control applications.The IRFR3418TRPBF is a bottom-FET manufactured by International Rectifier. It is an N-Channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This type of MOSFET is commonly used in many types of power switch circuits including power supplies, motor control and motor speed control.The main feature of this MOSFET is its high voltage rating of 60V and current rating of 33A. Its typical input capacitance is 2500pF and its output capacitance is 325pF. The ON resistance of this MOSFET is 9mΩ which is lower than most other MOSFET types. The gate-source threshold voltage is 4V and the bias current at 1V is 10µA.The working principle of the IRFR3418TRPBF MOSFET is based on the metal-oxide-semiconductor field-effect principle. In this principle, a metal electrode is placed between a pair of electrodes and a surface layer of insulation material such as silicon dioxide is applied. When a voltage is applied to the metal-oxide layer, the surface of the insulating material changes and modulates the electron-hole pairs, resulting in a flow of current between the metal and the pair of electrodes.This principle can be used to control the flow of electric current through a device by varying the applied voltages. For instance, the IRFR3418TRPBF can be used as a switch in many power switching applications. By applying a voltage to the gate terminal, a channel is established between the drain and the source terminals. This allows for the flow of current through the device as long as the voltage is maintained.By changing the voltage that is applied to the gate terminal, the amount of current that can flow through the device can also be changed. This is why the IRFR3418TRPBF is commonly used in the switching and regulation of voltages in many types of electronic circuit applications.In summary, the IRFR3418TRPBF is a high voltage MOSFET that is used for many power switch circuits. Its main features include a high voltage rating of 60V, a current rating of 33A, an input capacitance of 2500pF, an output capacitance of 325pF and low resistance. Its working principle is based on the metal-oxide-semiconductor field effect and it can be used to control the flow of electric current by varying the applied voltages. This makes it a great choice for applications such as power supplies, motor control and motor speed control.

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