IRFR3607TRPBF Allicdata Electronics
Allicdata Part #:

IRFR3607TRPBFTR-ND

Manufacturer Part#:

IRFR3607TRPBF

Price: $ 0.60
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 75V 56A DPAK
More Detail: N-Channel 75V 56A (Tc) 140W (Tc) Surface Mount D-P...
DataSheet: IRFR3607TRPBF datasheetIRFR3607TRPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.59857
10 +: $ 0.48745
100 +: $ 0.37595
1000 +: $ 0.30075
10000 +: $ 0.29020
Stock 1000Can Ship Immediately
$ 0.6
Specifications
Vgs(th) (Max) @ Id: 4V @ 100µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 140W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3070pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 9 mOhm @ 46A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRFR3607TRPBF is a single N-Channel MOSFET transistor in a TO-220AB package. It is designed for power switching applications such as motor control, relay and solenoid drivers, inverters, and switch-mode power supplies.

In power switching applications, MOSFET transistors are ideal because of their high current and voltage handling capability, low on-resistance, high power density, and low gate capacitance. The IRFR3607TRPBF offers very good performance characteristics compared to other power MOSFETS, with an on-resistance of 60 mΩ, a maximum gate-source voltage of 30V, and a maximum drain-source voltage of 100V.

The IRFR3607TRPBF is a N-Channel MOSFET with a maximum drain current of 2.5A and a drain-source breakdown voltage of 100V. It is constructed with an advanced high-voltage MOSFET process which incorporates an integral Schottky diode for fast-switching performance. Its on-resistance is low enough to minimize conduction losses and provide high efficiency in switching applications.

The main advantage of this transistor is its ability to switch large currents quickly, with minimal switching loss. This makes it ideal for motor control, inverters, and switch-mode power supplies. The high voltage rating of this transistor allows it to be used in power systems operating at up to 100V. The standard TO-220AB package makes it easy to use in a wide range of applications.

In switching applications, the IRFR3607TRPBF is operated by applying a voltage to the gate to turn it on. The gate-source voltage determines the amount of current flowing through the MOSFET when it is on. The voltage applied to the drain must be higher than the voltage applied to the source in order for the MOSFET to be turned on. When the gate-source voltage is released, the drain-source current is shut-off and the MOSFET is turned off.

Overall, the IRFR3607TRPBF is a powerful, yet cost-effective power MOSFET transistor. It can handle large currents and voltages, has excellent performance characteristics, and is designed for power switching applications. Its TO-220AB package makes it easy to use in a wide range of applications. With its excellent performance and cost-effectiveness, it is a great choice for power switching applications.

The specific data is subject to PDF, and the above content is for reference

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