IRFR3704TRLPBF Allicdata Electronics
Allicdata Part #:

IRFR3704TRLPBF-ND

Manufacturer Part#:

IRFR3704TRLPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 75A DPAK
More Detail: N-Channel 20V 75A (Tc) 90W (Tc) Surface Mount D-Pa...
DataSheet: IRFR3704TRLPBF datasheetIRFR3704TRLPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 90W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRFR3704TRLPBF, a 55V N-Channel MOSFET, is available in an TO-220AB package. The MOSFET has fast switching, high gain, and low on-resistance, making it suitable for high current applications. IRFR3704TRLPBF is suitable for use in a variety of applications, especially those that require switching on and off quickly and efficiently.

The working principle of a MOSFET is based on the idea of “gate modulation”. Gate modulation is the process by which a small electric current is used to control the flow of a large current. It works by creating a channel between the source and drain of the MOSFET. The gate of the MOSFET is used to control the current in the channel by altering the electric field around the channel.

The IRFR3704TLRPBF is capable of handling currents up to 27A, making it suitable for applications that require high power handling capability. It has a low threshold voltage of only 0.85V and a fast switching time of 75nS. It is designed for use in applications such as motor controllers, high-frequency switching, and DC-DC converters.

IRFR3704TRPBF can also be used for power switching applications, particularly where high voltage and low current capability are both required. Due to its low on-resistance (Rdson) and its high switching capability, it is ideally suited for DC motor control and load switching applications. It is suitable for applications where power dissipation and efficiency are the primary considerations.

In addition, IRFR3704TRLPBF can be used in gate driver circuit designs. Gate drivers are used to control the gate voltage of the MOSFET, allowing it to be switched on and off more quickly. This can be useful for controlling high-frequency switching, as the gate driver circuit will allow the MOSFET to switch faster than would be possible if the gate voltage were controlled manually.

The IRFR3704TRLPBF is also suitable for use in high-speed switching applications, such as DC-DC converters and boost converters. Due to its low on-resistance, it can control high voltage, high current supplies with minimal power dissipation and improved efficiency. It is able to provide fast switching speeds and a low-noise operation.

Overall, the IRFR3704TRLPBF is an ideal choice for applications that require fast switching, high gain, and low on-resistance. It is suitable for use in motor controller and load switching applications, as well as gate driver circuits and DC-DC converters. Its fast switching time, low threshold voltage, and high current capabilities make it one of the most versatile and reliable MOSFETs available.

The specific data is subject to PDF, and the above content is for reference

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