IRFR3704ZTRRPBF

Series:	HEXFET®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	8.4 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:	2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	14nC @ 4.5V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1190pF @ 10V
FET Feature:	--
Power Dissipation (Max):	48W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D-Pak
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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IRFR3704ZTRRPBF Application Field and Working Principle The IRFR3704ZTRRPBF is a single-input, single-output N-channel MOSFET designed for use in a wide variety of applications. Its high current-handling capability and low RDS(on) make it an attractive choice for power systems with large power requirements. The IRFR3704ZTRRPBF is also suitable for high-frequency applications and switching devices due to its low output capacitance. In terms of applications, the IRFR3704ZTRRPBF is used in a variety of applications, ranging from DC-to-DC converters, current-regulated and overvoltage protection circuits, DC motor speed controlling and other power supply applications. Additionally, the IRFR3704ZTRRPBF can be used in circuits where current limiting, voltage-sensitive shutdown and power-conservation features are required.The IRFR3704ZTRRPBF works on a principle of voltage-controlled conductivity between its two terminals, the drain and the source, where the gate acts as a control terminal. Basically, when a positive voltage is applied to the gate, it results in a positive change in the voltage across the drain and source, which then increases the current between the two terminals. The voltage across the drain and source controls the on-resistance of the device. The higher the applied voltage, the lower the on-resistance will be.The IRFR3704ZTRRPBF can be applied in many of the applications because of its high-power performance. The low RDS(on) allows the device to be used in higher power systems, while the high-channel mobility and low output capacitance makes it suitable for high-frequency applications. Additionally, the IRFR3704ZTRRPBF has low on-resistance and gate charge, with a breakdown voltage of 20V. The IRFR3704ZTRRPBF can also be used in applications where current limiting, voltage-sensitive shutdown, and power-conservation features are essential. In terms of current limiting, it is capable of protecting circuit components from excessive power due to a fault or transient. The voltage-sensitive shutdown feature enables the device to turn off the power supply when the voltage exceeds a preset limit. Alternatively, the power-conservation feature helps to reduce the overall load on the system by adjusting the device’s operating current. Overall, the IRFR3704ZTRRPBF is a popular choice for a wide variety of applications due to its impressive performance. Its high current-handling capability, low RDS(on), low gate charge, and low output capacitance make it suitable for both power and high-frequency applications. Additionally, its current limiting, voltage-sensitive shutdown, and power-conservation features make it a safe and reliable choice in many applications.

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