| Allicdata Part #: | IRFR3706PBF-ND |
| Manufacturer Part#: |
IRFR3706PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 20V 75A DPAK |
| More Detail: | N-Channel 20V 75A (Tc) 88W (Tc) Surface Mount D-Pa... |
| DataSheet: | IRFR3706PBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 88W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2410pF @ 10V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 9 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.8V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IRF3706PBF is a P-channel Field Effect Transistor (FET) that is suitable for low side switch applications, such as synchronous rectification, power management, and battery charging. The device is a MOSFET that is suitable for switching applications with its low Ron characteristics, fast switching times, and low power dissipation.
IRF3706PBF is a P-channel MOSFET that is designed for low-side switching applications. It can be used for synchronous rectification, power management, and battery charging. The device is rated for 60V and offers low on resistance of 0.045 Ohms at 4.5V drain-source voltage and its drain current capability is rated at 16A. The device has a low threshold voltage of 0.8V which helps to reduce turn-on losses significantly when compared to other P-channel MOSFETs.
IRF3706PBF is a fast-switching device with a maximum drain-source on-resistance (RDS (on)) of 350mΩ and maximum drain current of 16A. The device is also capable of switching at high frequencies of up to 30MHz with a turnaround times of only 30ns. The device is also designed to dissipate low power, making it ideal for low-power applications, such as power management in battery operated devices.
The IRF3706PBF is a uni-polar device, meaning that it can be used to switch only one type of current — either positive or negative, but not both. Because of this, the device should be used with caution in applications where both positive and negative currents may be present.
The working principle of the IRF3706PBF is based on the electrostatic potential between semiconductors and the applied electric field. When the electric field is applied, the drain-source gate voltage creates enough electrostatic attraction for the electrons to move from the source to the drain. This is known as the electron "drift" which controls conduction between the source and the drain. The device requires a gate-source voltage between 4.5V and 6V in order to achieve the rated current and on-resistance.
This P-channel MOSFET is a useful device for low-side switch applications such as synchronous rectification, power management and battery charging. The device features a low threshold voltage, fast switching times and low power dissipation. Its low on-resistance and fast switching speed makes it ideal for applications where high frequency performance and low power dissipation are required.
The specific data is subject to PDF, and the above content is for reference
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IRFR3706PBF Datasheet/PDF