IRFR5410TR Allicdata Electronics
Allicdata Part #:

IRFR5410TR-ND

Manufacturer Part#:

IRFR5410TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 100V 13A DPAK
More Detail: P-Channel 100V 13A (Tc) 66W (Tc) Surface Mount D-P...
DataSheet: IRFR5410TR datasheetIRFR5410TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 66W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 205 mOhm @ 7.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRFR5410TR is a N-Channel MOSFET, specifically manufactured from the IRL5410T manufacturing technology. It is usually available as two specific voltage level packages: TO-220F and D2PAK, though several other packages do exist.

The IRFR5410TR is designed for use in a variety of applications. It is particularly popular for use in musical instruments, audio amplifiers and motor control circuits. Its small size and mass enable it to be placed in the tight spots and it can also be used as either an input stage or a high power output stage in power amplifiers.

The IRFR5410TR is an ideal choice for applications that need an insulated MOSFET circuit. When it comes to switching transistors, the behavior and reliability of the IRFR5410TR is quite superior. It offers a very high power and current handling capacity, along with a fast switching speed, and extremely low conductance losses.

The IRFR5410TR is composed of two gates, an N- and a P-type MOSFETs. The two MOSFETs can be independently used in separate circuits. In addition, the gate-source and gate-drain capacitance of the IRFR5410TR are optimized for fast switching. In normal operation, current flows with the help of applied voltage; the greater the voltage applied, the more current is delivered.

The IRFR5410TR can be used in applications with heavy loads since its threshold voltage is low. This allows the device to start switching while consuming little energy. The threshold voltage is also low enough to not damage sensitive devices. The IDSS of the IRFR5410TR is also quite low, making it possible to operate without the need for additional heat sinks.

The IRFR5410TR also offers a variety of features for circuit design. For example, it has an N-Channel Enhancement-Mode, which allows for a low switching threshold. With this feature, the signal noise can be reduced and the power supply noise can be minimized. Moreover, it offers a low electrical resistance to complement its maximum switching speed. This reduces power loss and makes the device highly efficient.

The most important feature of the IRFR5410TR is its high-speed switching capability. This can help to reduce the size and weight, making the device suitable for miniaturized applications. The low power consumption also ensures that people, animals and other sensitive electronics are protected from the possibility of electrical shock, even when the system is switched on and off.

The IRFR5410TR can be employed in a variety of applications, ranging from audio amplifiers and motor control to industrial automation and HVAC systems. Its small size and mass make it suitable for applications in which space and weight are an issue. Furthermore, its low losses and high-speed switching capability make it an ideal choice for applications that require high power and fast switching.

The specific data is subject to PDF, and the above content is for reference

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