| Allicdata Part #: | IRFR5505-ND |
| Manufacturer Part#: |
IRFR5505 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 55V 18A DPAK |
| More Detail: | P-Channel 55V 18A (Tc) 57W (Tc) Surface Mount D-Pa... |
| DataSheet: | IRFR5505 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 57W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 650pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 110 mOhm @ 9.6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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Whether in solar cells, power supplies or medical equipment, to name just a few, the IRFR5505 MOSFET has become a significant presence across all manner of different industries thanks to its versatile application. This report will discuss the application field and working principle of the IRFR5505 MOSFET.
What is a MOSFET
MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor. MOSFETs are active electronic components which have either an n-type channel or a p-type channel. These channels allow current to flow through the MOSFET in an efficient manner, resulting in a highly efficient device.
MOSFETs can be identified by their distinct four-terminal design, which consists of the drains, sources, gates, and body. The gate terminal acts as the control signal, while the body is grounded. The source and drain terminal together form the channel which allows current to flow when the gate signal is applied.
What is the IRFR5505 MOSFET
The IRFR5505 is a N-channel enhancement mode MOSFET which is designed for use in power switching applications. It comes in a standard SOT-223 package, making it an ideal choice for applications in which saving space is a priority.
The IRFR5505 has an 8A rated continuous drain current, with a maximum voltage of 500V. It also has a low on-state resistance and fairly low gate-source threshold voltage. In addition, it is capable of switching frequencies up to 40 kHz, meaning it can be used in applications requiring high-speed switching.
IRFR5505 Application Field
The IRFR5505 is most commonly used in power supply circuits and other power switching applications. It is commonly used in solar cells, to control the flow of current from the solar cells to the power supply. It is also used in medical equipment, as it can switch quickly and is able to handle large currents.
In addition, the IRFR5505 MOSFET is used in applications where high power output is needed, such as automotive circuits and high-power LED lighting. This is due to its high drain current rating and low on-state resistance.
Working Principle of IRFR5505
The IRFR5505 MOSFET operates using the principle of a field effect transistor (FET). In order for current to flow through the channel, a voltage must be applied to the gate terminal. This creates a field in the channel, which increases conductivity, allowing current to flow.
The applied voltage on the gate terminal is usually referred to as a threshold voltage. If the voltage applied at the gate exceeds the threshold voltage, then the MOSFET will be "on" and current will flow through the channel. Conversely, if the voltage applied at the gate is lower than the threshold voltage, then the MOSFET will be "off" and no current will flow through the channel. The threshold voltage of the IRFR5505 MOSFET is 5V.
Conclusion
In conclusion, the IRFR5505 MOSFET is an extremely versatile component which is utilized in many different industries and applications. It is capable of switching high currents, has a low on-state resistance, and a fairly low gate-source threshold voltage. Additionally, it operates using the principle of a field effect transistor, whereby an applied voltage must exceed the threshold voltage in order for current to flow through the channel.
The specific data is subject to PDF, and the above content is for reference
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IRFR5505 Datasheet/PDF