IRFR5505 Allicdata Electronics
Allicdata Part #:

IRFR5505-ND

Manufacturer Part#:

IRFR5505

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 55V 18A DPAK
More Detail: P-Channel 55V 18A (Tc) 57W (Tc) Surface Mount D-Pa...
DataSheet: IRFR5505 datasheetIRFR5505 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 110 mOhm @ 9.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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Whether in solar cells, power supplies or medical equipment, to name just a few, the IRFR5505 MOSFET has become a significant presence across all manner of different industries thanks to its versatile application. This report will discuss the application field and working principle of the IRFR5505 MOSFET.

What is a MOSFET

MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor. MOSFETs are active electronic components which have either an n-type channel or a p-type channel. These channels allow current to flow through the MOSFET in an efficient manner, resulting in a highly efficient device.

MOSFETs can be identified by their distinct four-terminal design, which consists of the drains, sources, gates, and body. The gate terminal acts as the control signal, while the body is grounded. The source and drain terminal together form the channel which allows current to flow when the gate signal is applied.

What is the IRFR5505 MOSFET

The IRFR5505 is a N-channel enhancement mode MOSFET which is designed for use in power switching applications. It comes in a standard SOT-223 package, making it an ideal choice for applications in which saving space is a priority.

The IRFR5505 has an 8A rated continuous drain current, with a maximum voltage of 500V. It also has a low on-state resistance and fairly low gate-source threshold voltage. In addition, it is capable of switching frequencies up to 40 kHz, meaning it can be used in applications requiring high-speed switching.

IRFR5505 Application Field

The IRFR5505 is most commonly used in power supply circuits and other power switching applications. It is commonly used in solar cells, to control the flow of current from the solar cells to the power supply. It is also used in medical equipment, as it can switch quickly and is able to handle large currents.

In addition, the IRFR5505 MOSFET is used in applications where high power output is needed, such as automotive circuits and high-power LED lighting. This is due to its high drain current rating and low on-state resistance.

Working Principle of IRFR5505

The IRFR5505 MOSFET operates using the principle of a field effect transistor (FET). In order for current to flow through the channel, a voltage must be applied to the gate terminal. This creates a field in the channel, which increases conductivity, allowing current to flow.

The applied voltage on the gate terminal is usually referred to as a threshold voltage. If the voltage applied at the gate exceeds the threshold voltage, then the MOSFET will be "on" and current will flow through the channel. Conversely, if the voltage applied at the gate is lower than the threshold voltage, then the MOSFET will be "off" and no current will flow through the channel. The threshold voltage of the IRFR5505 MOSFET is 5V.

Conclusion

In conclusion, the IRFR5505 MOSFET is an extremely versatile component which is utilized in many different industries and applications. It is capable of switching high currents, has a low on-state resistance, and a fairly low gate-source threshold voltage. Additionally, it operates using the principle of a field effect transistor, whereby an applied voltage must exceed the threshold voltage in order for current to flow through the channel.

The specific data is subject to PDF, and the above content is for reference

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