IRFR7746PBF

Vgs(th) (Max) @ Id:	3.7V @ 100µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-PAK (TO-252AA)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	99W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3107pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	89nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	11.2 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	56A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tube

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IRFR7746PBF is a field effect transistor (FET), more specifically a metal-oxide-semiconductor FET (MOSFET) Integrated with a voltage regulator, the product is commonly used in digital circuits, mainly used in power switch applications, audio equipment, and power amplifiers. This device has shielded leads that prevent induction noise from being introduced into the circuitry. It is made with a dual-gate MOSFET and a high-value resistor for maximum noise immunity. Moreover, this device is capable of providing excellent performance in high voltage fast switching applications.The IRFR7746PBF is a single N-channel Enhancement mode device, with a drain current capability of up to 57A (at 25°C) and a rated drain-source voltage of up to 100V. The typical gate threshold voltage is about 2V, and the on resistance is extremely low, at 0.062Ω (at 25°C). It also features a dynamic dv/dt rating of up to 5V/ns, making it very suitable for use in fast switching applications.The IRFR7746PBF is usually fabricated with an Advanced Semiconductor Coating Technology (ASCT) built in the design. It uses an inverted-gate structure that is insulation-deposited on a silicon substrate to help reduce leakage current. This technology also provides excellent protection against electrostatic discharge (ESD) and ensures a long life for the device.The working principle of the IRFR7746PBF is fairly simple. As with all FETs, when a voltage is applied to the gate, carriers (electrons or holes) flow from source to drain. This device has two opposite polarity voltages - the gate and the source. The application of a voltage to the gate causes carriers to pass from the source to the drain, resulting in a current flow. The current level is determined by the gate-source voltage.The IRFR7746PBF has a high input impedance, which makes it suitable for use as a voltage regulator in many applications. In addition, it can be used to control the output current of a switching power supply.The IRFR7746PBF is a versatile device with a wide range of applications. It can be used in power switching and voltage regulation in digital circuits, such as those in audio and power amplifier applications. It can also be used as a switch in motor driver circuits as well as in high-voltage applications, such as lighting or security systems.In conclusion, the IRFR7746PBF is a versatile and reliable single N-channel MOSFET that is widely used in numerous applications, such as digital circuits, motor drivers, lighting, and power supplies. Its inverted-gate technology helps reduce leakage current and provide excellent ESD protection, while its low on-resistance and high v/dt capabilities make it ideal for controlling current in high-voltage and fast-switching applications.

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