IRFR9010TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRFR9010TR is a silicon N-Channel MOSFET used in a wide range of applications. It is commonly found in digital logic circuits, power management, and power switching applications. The IRFR9010TR is a highly efficient MOSFET and offers high current carrying capacity due to its deep vertical channel. It also has an extended drain-source on-state resistance and a very low gate-source on-state resistance.

MOSFETs are three-terminal devices composed of a source, gate, and drain. The source of a MOSFET is an electrode to which electrons are injected into the transistor. The gate of a MOSFET is the electrode that controls the flow of electrons from the source to the drain. The drain of a MOSFET is an electrode from which the electrons can exit the transistor. The IRFR9010TR is a single N-Channel MOSFET.

In operation, the IRFR9010TR acts as a voltage-controlled switch. When a positive voltage is applied to the gate, positive charges accumulate at the oxide layer between the gate and the source, forming an inversion layer. This inversion layer reduces the resistance between the source and the drain, increasing the flow of electrons between the two electrodes. The resistance between the source and drain can be varied by varying the voltage applied to the gate. A more negative voltage will reduce the resistance between the source and drain, and a more positive voltage will increase the resistance.

The IRFR9010TR can be used in a variety of applications. It can be used as a power switch in motor control and inverter applications, as a switch in digital logic circuits, and as a voltage regulator in power management applications. The device is also suitable for LCD backlight applications and can be used as an amplifier in audio applications.

The IRFR9010TR offers a low on-state resistance, allowing it to handle large currents. Its high current carrying capacity comes from its deep vertical channel, which reduces the on-state resistance between the source and drain. The device also has an extended drain-source on-state resistance, which helps to reduce switching losses. In addition, it has a very low gate-source on-state resistance, which helps to reduce turn-on and turn-off times.

The IRFR9010TR is a versatile MOSFET suitable for a range of applications. Its low on-state resistance and high current carrying capacity make it ideal for power switching applications, while its extended drain-source on-state resistance and low gate-source on-state resistance make it suitable for digital logic applications. In addition, its low on-state resistance makes it suitable for use in LCD backlight applications and audio applications. Due to its versatility and performance, the IRFR9010TR is a popular choice for many designers.

The specific data is subject to PDF, and the above content is for reference