IRFR9014NTR

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 25W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	270pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	12nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	500 mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	5.1A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The IRFR9014NTR is a single N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for switching applications in telecommunication, automotive and industrial applications. The device offers excellent robustness and performance with low on-state resistance, a wide gate threshold range, and fast switching times when compared to other types of FETs. This article provides a brief introduction to the IRFR9014NTR application field and working principle.

Application Field

The IRFR9014NTR is suitable for a variety of device needs, including load and line switching, power management, temperature management, and many other applications. Its flexibility allows it to be used in fields such as communication, industrial electronics, automotive, and consumer electronics. The IRFR9014NTR can be used for various control purposes and is capable of providing fast switching between on and off states, along with low on-state resistance and a wide gate threshold range.

Working Principle

The IRFR9014NTR is an N-Channel MOSFET, meaning it has an N-type source, drain, and gate. The source of the IRFR9014NTR is connected to ground, the drain is connected to an external load, and the gate serves as a switch that controls the flow of current between the source and drain. When the gate is at 0 volts (Vg=0, Vds=0), the FET is off and there is no current flowing between the source and drain. When the gate voltage is increased enough (Vg ≥ Vth), the FET is turned on and there is current flow.

Characteristics and Comparison

The IRFR9014NTR has a number of important characteristics that make it particularly valuable in a wide range of applications. Its fast switching time makes it useful for digital switching, its excellent thermal resistance ensures reliability in high-temperature environments, and its low on-state resistance provides efficient power control. Furthermore, the IRFR9014NTR has a very wide gate threshold range from -1.5 V to -3.3 V, allowing for greater flexibility in the application.When compared to other N-channel MOSFETs, the IRFR9014NTR stands out for its low on-state resistance. In addition, it is superior in terms of thermal resistance and switching speed. Finally, its wide gate threshold range makes it more versatile than other FETs, providing greater design flexibility.

Conclusion

The IRFR9014NTR is a single N-channel MOSFET designed for switching applications in telecommunication, automotive and industrial applications. It has a number of advantages, including fast switching time, excellent thermal resistance, and low on-state resistance. In addition, the IRFR9014NTR has a very wide gate threshold range from -1.5 V to -3.3 V, allowing for greater flexibility in the application. As such, it is an excellent choice for a variety of device needs, including load and line switching, power management, temperature management, and many other applications.

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