| Allicdata Part #: | IRFR9014TR-ND |
| Manufacturer Part#: |
IRFR9014TR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 60V 5.1A DPAK |
| More Detail: | P-Channel 60V 5.1A (Tc) 2.5W (Ta), 25W (Tc) Surfac... |
| DataSheet: | IRFR9014TR Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 500 mOhm @ 3.1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5.1A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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IRFR9014TR MOSFET is a self-clad vertical power N-channel power MOSFET, which is widely used in low voltage, low to medium power applications. It offers low ON-resistance and excellent switching performance. This device operates from -55°C to +150°C junction temperature and features a TO-220AB fully isolated mounting flange package. The IRFR9014TR is a semiconductor device that enables a high-power electric current or signal to control a low-level signal. This MOSFET is designed to perform exceptionally in high-temperature environments and to handle high amounts of voltage and current.
The IRFR9014TR MOSFET is a three-terminal device with drain, gate, and source terminals. The device is constructed so that a voltage applied at the gate can control the current flowing between the source and drain areas. The main feature of this device is the unique structure that produces an extremely low ON-resistance. This low ON-resistance combined with the TO-220AB package makes the IRFR9014TR suitable for use in low voltage, low to medium power applications.
In operation, the n-type channel of the MOSFET is created when a voltage is applied to the gate. This creates a strong electric field between the source and drain, resulting in a current between these two terminals. As the amount of current increases, the electric field decreases, allowing the current to flow more freely. This is known as the saturation region, and it is the most efficient operation mode of the MOSFET, providing the highest current-carrying ability and the lowest power loss.
The IRFR9014TR MOSFET can be used in applications such as motor control and power switching circuits. Its ratings and features make it a good choice for circuits driven by higher voltage sources, where the current varies rapidly and it is important to switch the current quickly and accurately. Additionally, this MOSFET can be used in circuits with multiple circuits sharing the same power supply because it can reduce power loss by regulating the voltage.
In summary, the IRFR9014TR is an excellent choice for a wide range of applications. Its low on-resistance and excellent switching performance in high temperature environments make it suitable for low voltage, low to medium power applications. Additionally, the device features an efficient saturation region and a TO-220AB fully isolated mounting flange package, making it ideal for applications where multiple circuits share the same power supply.
The specific data is subject to PDF, and the above content is for reference
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IRFR9014TR Datasheet/PDF