| Allicdata Part #: | IRFR9014PBFTR-ND |
| Manufacturer Part#: |
IRFR9014TRPBF |
| Price: | $ 0.26 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 60V 5.1A DPAK |
| More Detail: | P-Channel 60V 5.1A (Tc) 2.5W (Ta), 25W (Tc) Surfac... |
| DataSheet: | IRFR9014TRPBF Datasheet/PDF |
| Quantity: | 4000 |
| 1 +: | $ 0.26000 |
| 10 +: | $ 0.25220 |
| 100 +: | $ 0.24700 |
| 1000 +: | $ 0.24180 |
| 10000 +: | $ 0.23400 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 500 mOhm @ 3.1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5.1A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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IRFR9014TRPBF is a type of metal-oxide-semiconductor field-effect transistors (MOSFETs) commonly used in electronic circuits. IRFR9014TRPBF is characterized as a N-channel enhancement transistor in a single-package scheme, mainly used in power switching circuits, general purpose switching, and amplifier applications. IRFR9014TRPBF feature low on-resistance and high off-isolation, making them superior to other types of transistor devices.
The IRFR9014TRPBF is a N-channel enhancement-mode MOSFET with a vertical structure that allows for quick switching of current and excellent high-temperature performance. A MOSFET works by using an electric gate field to alter the conductivity of a channel region between the source and drain. When a positive input is applied to the gate terminals, a field is created that attracts electrons, creating a conductive channel between the source and drain and allowing current to flow. When the input is removed, the electron field is removed, and the channel prevents current flow.
The IRFR9014TRPBF can be used in a wide range of applications such as electronic product power management, mobile power solutions, smart switches, audio amplifiers, and industrial power supplies. It is suitable for both low- and mid-power applications, as its low on-resistance and high off-isolation provide effective power switching. With its low on-resistance, the IRFR9014TRPBF provides excellent thermal resistance and reduces power dissipation, making it a great choice for power circuits.
The IRFR9014TRPBF is ideal for circuits that require high switching speeds and low on-resistance. This device is often used in circuits that require the ability to switch off quickly and efficiently, such as in audio amplifiers or power supplies. Its high-performance characteristics make it ideal for voice recognition systems, smart meters, and other high-end applications.
In summary, the IRFR9014TRPBF is a versatile and reliable single-package N-channel enhancement MOSFET. It is suitable for use in many electronic circuits, such as power management, smart switches, audio amplifiers, and industrial power supplies. Its low on-resistance and high off-isolation provide efficient power switching and reduce power dissipation. The IRFR9014TRPBF is an ideal choice for voice recognition systems, smart meters, and other high-end applications.
The specific data is subject to PDF, and the above content is for reference
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IRFR9014TRPBF Datasheet/PDF