IRFR9020

Series:	--
Packaging:	Tube
Part Status:	Obsolete
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	50V
Current - Continuous Drain (Id) @ 25°C:	9.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	280 mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	14nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	490pF @ 25V
FET Feature:	--
Power Dissipation (Max):	42W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D-Pak
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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The IRSF9020 is a type of Field Effect Transistor (FET) commonly used in electronic applications. It is a MOSFET (Metal Oxide Semiconductor FET), which is a type of FET that uses an insulated-gate electrode to control the conductivity of a semiconducting pathway. This type of transistor is also known as a structure-insulated-gate-transistor (SIGT).The IRSF9020 can be used as a switch or amplifier depending on the application. In switching applications, it is used to switch electrical current on and off. This transistor is the building block for creating a digital circuit, as it is able to turn on and off the current. In addition, it can be used as an amplifier, where it will amplify an electrical signal that passes through it and increase the voltage or current.The IRSF9020 is mainly used in a wide range of applications from military to automotive equipment and from industrial to consumer products. Common uses include switching and control of motors, relays, lamp drivers, solenoids, and solid-state switching devices. It can also be used as an interfacing device in communications and data processing.The design and structure of the IRSF9020 allows it to function with a higher efficiency of switching than traditional transistors. This transistor features an insulated gate which prevents any current leakage. It also has a lower input-capacitance, which allows the device to handle higher switching frequencies. The low RDS(on) power allows it to switch on faster and have a lower voltage drop, which makes it suitable for high-speed switching applications.The working principle of the IRSF9020 is based on the concept of a depletion type MOSFET. The gate-source voltage of the transistor is applied between the gate and source, which determines the channel resistance. When the gate-source voltage is positive, the channel resistance is low, allowing current to flow. When the gate-source voltage is negative, the channel resistance is high, preventing current from flowing. By controlling the gate-source voltage, the channel resistance can be dynamically varied to control the current flow through the transistor.In summary, the IRSF9020 is a type of MOSFET commonly used in many electronic applications. It is a structure-insulated-gate-transistor which can be used as a switch or an amplifier depending on the application. It is mainly used in a wide range of applications from military to automotive equipment, and it features an insulated gate which prevents current leakage and a low RDS(on) power, so it is suitable for high-speed switching applications. The working principle of the IRSF9020 is based on the concept of a depletion type MOSFET, where the gate-source voltage determines the channel resistance which can be dynamically varied to control the current flow through the transistor.

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