IRFR9210 Allicdata Electronics
Allicdata Part #:

IRFR9210-ND

Manufacturer Part#:

IRFR9210

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 200V 1.9A DPAK
More Detail: P-Channel 200V 1.9A (Tc) 2.5W (Ta), 25W (Tc) Surfa...
DataSheet: IRFR9210 datasheetIRFR9210 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFR9210 is a silicon can vertical power MOSFET designed for ease of use in switching applications. It is manufactured by International Rectifier and comes in a TO-220 or D2PAK surface-mount package. This device is often used in applications that require high-current, low-voltage switch control, such as high-efficiency, low-noise amplifiers, radio receivers, power supplies, and motor control.

The IRFR9210 operates in the enhancement mode, meaning it begins to conduct when an electric field appears across its gate region. With a drain-to-source voltage of up to 100V and a gate-to-source voltage of up to 20V, it can switch currents of up to 33A and features a very low RDS(on) of only 0.0045Ω. This device utilizes a self-adjusting threshold voltage of approximately 4V, making it ideal for controlling low-current and low-voltage signals.

This MOSFET provides over-temperature protection, making it a great choice for high-temperature environments. With a very low gate-charge, fast switching speed, and high current carrying capacity, the IRFR9210 is an excellent device for a wide range of applications, including battery-operated devices, audio/video equipment, and power delivery systems.

The IRFR9210 has both an on-state and off-state region. When the gate-to-source voltage is low, the MOSFET is off. When the voltage across the gate-to-source junction edges closer to 4V, the MOSFET begins to turn on, and this is where the device performs its primary function as a power switch. As more voltage is applied to the gate, the current flow across the drain-source junction increases. The device then operates as a linear, voltage-controlled resistor.

The device also includes built-in protection against short circuits and over-temperature events. In the event of an over-temperature or short circuit, the MOSFET will shut off and protect the circuit from damage. The device also includes an optional thermal derating feature, which causes the MOSFET to reduce its drain current when the temperature of the device exceeds a predetermined limit.

The IRFR9210 is a highly versatile and efficient device for a variety of applications. Its small size and low power dissipation make it an ideal choice for many applications, particularly those that require low-current, low-voltage switch control. With its high current-carrying capacity and self-adjusting gate threshold, the IRFR9210 can be used in a wide range of applications, such as audio/video equipment, power delivery systems, and battery-operated devices.

The specific data is subject to PDF, and the above content is for reference

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