IRFRC20TRPBF Allicdata Electronics
Allicdata Part #:

IRFRC20PBFTR-ND

Manufacturer Part#:

IRFRC20TRPBF

Price: $ 0.25
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 2A DPAK
More Detail: N-Channel 600V 2A (Tc) 2.5W (Ta), 42W (Tc) Surface...
DataSheet: IRFRC20TRPBF datasheetIRFRC20TRPBF Datasheet/PDF
Quantity: 14000
1 +: $ 0.25000
10 +: $ 0.24250
100 +: $ 0.23750
1000 +: $ 0.23250
10000 +: $ 0.22500
Stock 14000Can Ship Immediately
$ 0.25
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRFRC20TRPBF is a type of MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured by Infineon Technologies AG. It is designed for use in high-performance power conversion and switching applications. The IRFRC20TRPBF has a wide range of features that make it an ideal choice for a variety of applications. This article will discuss the application field of the IRFRC20TRPBF as well as its working principle.

Application Field

The IRFRC20TRPBF is most commonly used in power conversion applications. It can be used in voltage regulation, DC-DC power converters, battery management systems, automotive power converters and many more. Its low on-resistance, fast switching speed and high current handling capabilities make it well-suited for power conversion applications. The IRFRC20TRPBF is also well-suited for other applications such as motor drives, small signal switching and low-voltage power switching.

Working Principle

The working principle of the IRFRC20TRPBF MOSFET is based on the well-known gate-source voltage control. When a gate-source voltage is applied, a depletion zone is created in the channel between the drain and source. This zone lowers the resistance between the source and drain, allowing current to flow from the source to the drain. The amount of current that can be conducted through the channel is then determined by the magnitude of the applied gate-source voltage.

When no voltage is applied to the device, the drain-source resistance is high, and very little current is conducted. By varying the gate-source voltage, the drain-source resistance can be adjusted and the amount of current that is conducted can be varied. It is important to note that the current conducted through the device is proportional to the applied gate-source voltage.

The IRFRC20TRPBF has an integrated gate protection diode which prevents the device from being damaged due to the accumulation of excess charge on the gate. Furthermore, the IRFRC20TRPBF has a high maximum drain-source voltage of 800V and a maximum current rating of 20A, making it an ideal choice for high-power applications.

Conclusion

The IRFRC20TRPBF is an ideal choice for high-performance power conversion and switching applications. It has a wide range of features, including a low on-resistance, fast switching speed, high current handling capabilities and an integrated gate protection diode. The IRFRC20TRPBF is most commonly used in power conversion applications such as voltage regulation, DC-DC power converters, battery management systems and automotive power converters. Its working principle is based on gate-source voltage control, where the drain-source resistance between the source and drain is adjusted by varying the applied gate-source voltage.

The specific data is subject to PDF, and the above content is for reference

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