
Allicdata Part #: | IRFS3307-ND |
Manufacturer Part#: |
IRFS3307 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 130A D2PAK |
More Detail: | N-Channel 75V 130A (Tc) 250W (Tc) Surface Mount D2... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5150pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 6.3 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 130A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRFS3307 is a single-pole, double-throw (SPDT) transistor, manufactured and marketed by International Rectifier. It is a depletion-mode MOSFET (metal separated field-effect transistor) packaged in a TO-252 or DPAK housing and is also referred to as an "enhancement-mode" device because it operates in the same manner as an N-channel MOSFET. The IRFS3307 is an ideal transistor choice for applications such as power circuit switch-off, load switch-off, battery management, and phase control.
The IRFS3307 is an important MOSFET device; it is a unipolar device than can be operated in the enhancement mode, which means it can be used to switch on and off electrical current. Its construction is based on a silicon die, and it uses metal-oxide semi-conductor (MOS) technology. In this MOS technology, the current flows through a thin layer of metal oxide material which is present between the gate and the source of the transistor, thus keeping the source and drain from being directly connected to each other.
The IRFS3307 MOSFET is designed for high-power applications and features an avalanche-rated design. This allows it to be used in high-voltage and high-current applications, such as amplifiers, power supplies, and motor drives. It is capable of withstanding a maximum voltage of 600V and a maximum current of 66A. In addition, its maximum power dissipation rating is up to 920W.
The IRFS3307 MOSFET has very fast switching speeds due to its low input capacitance, which makes it ideal for use in high-frequency applications. Its low gate charge also helps to reduce the power consumption during switching operations. In addition, the IRFS3307 provides a low gate threshold voltage which makes it suitable for use in applications where lower voltage is needed for switching operations.
In terms of its electrical properties, the IRFS3307 features an on-resistance of 0.020Ω and an off-resistance of over 100MΩ. It also has a maximum voltage drop of 0.6V and a maximum gate-to-drain charge of -2nC. The temperature-dependent thermal resistivity is rated at 9.4oC/W.
The IRFS3307 MOSFET is suitable for use in a variety of applications. It is commonly used in high-power switching circuits, as well as in DC-DC and AC-DC power converters. It is also widely used in motor drives, such as in the automotive industry, and in applications where low power consumption is important. Additionally, it is used in circuits where higher efficiency and lower power consumption is required, such as in battery-powered inverters, solar systems, and communications systems.
The IRFS3307 is a versatile MOSFET which can be used in a wide range of applications. Its low input capacitance, high maximum voltage and current ratings, low gate-charge, and low gate threshold voltage make it an ideal choice for high-power as well as low-power applications. Furthermore, its avalanche-rated design and its low thermal resistivity help to make it a reliable choice for use in a variety of applications.
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