IRFS3307 Allicdata Electronics
Allicdata Part #:

IRFS3307-ND

Manufacturer Part#:

IRFS3307

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 75V 130A D2PAK
More Detail: N-Channel 75V 130A (Tc) 250W (Tc) Surface Mount D2...
DataSheet: IRFS3307 datasheetIRFS3307 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 150µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFS3307 is a single-pole, double-throw (SPDT) transistor, manufactured and marketed by International Rectifier. It is a depletion-mode MOSFET (metal separated field-effect transistor) packaged in a TO-252 or DPAK housing and is also referred to as an "enhancement-mode" device because it operates in the same manner as an N-channel MOSFET. The IRFS3307 is an ideal transistor choice for applications such as power circuit switch-off, load switch-off, battery management, and phase control.

The IRFS3307 is an important MOSFET device; it is a unipolar device than can be operated in the enhancement mode, which means it can be used to switch on and off electrical current. Its construction is based on a silicon die, and it uses metal-oxide semi-conductor (MOS) technology. In this MOS technology, the current flows through a thin layer of metal oxide material which is present between the gate and the source of the transistor, thus keeping the source and drain from being directly connected to each other.

The IRFS3307 MOSFET is designed for high-power applications and features an avalanche-rated design. This allows it to be used in high-voltage and high-current applications, such as amplifiers, power supplies, and motor drives. It is capable of withstanding a maximum voltage of 600V and a maximum current of 66A. In addition, its maximum power dissipation rating is up to 920W.

The IRFS3307 MOSFET has very fast switching speeds due to its low input capacitance, which makes it ideal for use in high-frequency applications. Its low gate charge also helps to reduce the power consumption during switching operations. In addition, the IRFS3307 provides a low gate threshold voltage which makes it suitable for use in applications where lower voltage is needed for switching operations.

In terms of its electrical properties, the IRFS3307 features an on-resistance of 0.020Ω and an off-resistance of over 100MΩ. It also has a maximum voltage drop of 0.6V and a maximum gate-to-drain charge of -2nC. The temperature-dependent thermal resistivity is rated at 9.4oC/W.

The IRFS3307 MOSFET is suitable for use in a variety of applications. It is commonly used in high-power switching circuits, as well as in DC-DC and AC-DC power converters. It is also widely used in motor drives, such as in the automotive industry, and in applications where low power consumption is important. Additionally, it is used in circuits where higher efficiency and lower power consumption is required, such as in battery-powered inverters, solar systems, and communications systems.

The IRFS3307 is a versatile MOSFET which can be used in a wide range of applications. Its low input capacitance, high maximum voltage and current ratings, low gate-charge, and low gate threshold voltage make it an ideal choice for high-power as well as low-power applications. Furthermore, its avalanche-rated design and its low thermal resistivity help to make it a reliable choice for use in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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