Allicdata Part #: | IRFS7440PBF-ND |
Manufacturer Part#: |
IRFS7440PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N CH 40V 120A D2PAK |
More Detail: | N-Channel 40V 120A (Tc) 208W (Tc) Surface Mount TO... |
DataSheet: | IRFS7440PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET®, StrongIRFET™ |
Packaging: | Tube |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 2.5 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 135nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4730pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 208W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 (D²Pak) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The IRFS7440PBF MOSFET is a very versatile type of semiconductor device because it can be used in very different electronic applications. It is a single enhancement-mode, N-channel MOSFET, with a high breakdown voltage, low gate-source capacitance, and higher current density. This MOSFET is also voltage controlled, meaning it can switch from an “on” state to an “off” state depending on the voltage applied to its gate terminal.
In the most general sense, the IRFS7440PBF can be used in any application where a power switch is required. It’s high current handling capacity and low on-resistance are especially useful in applications such as DC-DC converters, DC-AC inverters and low voltage power supplies. The IRFS7440PBF is also often used in automotive and industrial applications where higher current handling capacity is required.
The IRFS7440PBF MOSFET is particularly useful for pulse-width modulation (PWM) systems, where pulses of different widths are used to control the power switches. Due to its low on-resistance and high current density, the IRFS7440PBF is an ideal choice for these types of applications. Additionally, since it is an enhancement-mode MOSFET, it can be used to create an open collector configuration, allowing the use of a larger number of power switches in a single circuit.
The working principle of the IRFS7440PBF MOSFET is relatively simple. When a voltage of less than the threshold voltage is applied to its gate terminal, the MOSFET is in its “off” state and no current is flowing between its source and drain terminals. When the applied voltage exceeds the threshold voltage of the MOSFET (usually between 5 and 8 volts), the MOSFET is switched “on” and a current is allowed to flow between its source and drain terminals.
The IRFS7440PBF is a very versatile and reliable MOSFET which can be used for a variety of applications. Its low on-resistance, high current handling capacity and wide Gate-Source voltage range make it ideal for a variety of power switching applications. Furthermore, its enhancement-mode functionality allows for the use of open-collectors to create larger power switching circuits. The IRFS7440PBF is thus a popular choice for a variety of automotive, industrial, and PWM applications.
The specific data is subject to PDF, and the above content is for reference
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