| Allicdata Part #: | IRFS3206PBF-ND |
| Manufacturer Part#: |
IRFS3206PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 60V 120A D2PAK |
| More Detail: | N-Channel 60V 120A (Tc) 300W (Tc) Surface Mount D2... |
| DataSheet: |  IRFS3206PBF Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 150µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6540pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 3 mOhm @ 75A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tube |
Description
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IRFS3206PBF is a high performance HEXFET power MOSFET, used for a wide variety of applications in the automotive, industrial, medical and consumer markets. The IRFS3206PBF has been designed for use in high-speed switching and power conversion applications. It is available in various package types and can provide superior performance and reliability. In this article, we will discuss the application field and working principle of the IRFS3206PBF.Application FieldThe IRFS3206PBF has a wide range of applications, including high-current, high-voltage switching applications, converter circuits, and charge pump circuits. It can be used in automotive systems such as refrigerators, home entertainment systems, and motor control systems, as well as in industrial, medical, and consumer electronic applications.
The IRFS3206PBF is ideal for applications where low on-state resistance and high efficiency are required, such as in low-power motor control systems, current-sense circuits, and power converters. It is also an excellent choice for high-current load switching applications, due to its low gate threshold voltage and fast switching speed. Its wide safe operating area ensures maximum protection from thermal runaway.Working Principle
The IRFS3206PBF is a HEXFET power MOSFET, which is a type of Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). The IRFS3206PBF MOSFET is constructed of a p-type gate and source, and a n-type drain, with an insulated gate. When a voltage is applied to the gate, a small electric field is created and a channel is formed between the source and drain. This channel conducts current when a voltage is applied to the drain. The current flow is dependent on the voltage applied to the gate; the higher the gate voltage, the higher the current.The major advantage of HEXFET technology is its low on-state resistance, which allows for higher current flow at lower applied voltages. This makes it an ideal choice for low-power applications where efficiency is paramount. Additionally, it can operate up to a higher temperature than other types of transistors, which increases the lifespan and reliability of the device.Conclusion
The IRFS3206PBF is a high performance HEXFET power MOSFET and can be used in a variety of applications. It is ideal in applications where low on-state resistance and high efficiency are required. The IRFS3206PBF features a wide safe operating area, low gate threshold voltage, and fast switching speed, making it a reliable, efficient choice for a number of applications.
The specific data is subject to PDF, and the above content is for reference
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