Allicdata Part #: | IRFS634B_FP001-ND |
Manufacturer Part#: |
IRFS634B_FP001 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 250V 8.1A TO-220F |
More Detail: | N-Channel 250V 8.1A (Tc) 38W (Tc) Through Hole TO-... |
DataSheet: | IRFS634B_FP001 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 250V |
Current - Continuous Drain (Id) @ 25°C: | 8.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 450 mOhm @ 4.05A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1000pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 38W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F |
Package / Case: | TO-220-3 Full Pack |
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The IRFS634B_FP001 is a new type of field effect transistor (FET) developed for a range of applications. It is a single channel enhancement mode FET consisting of N-type and P-type materials. The IRFS634B_FP001 has a maximum current handling capacity of 5 Amps and a maximum voltage rating of 100 Volts. The package form is the TO-220AB with 3 terminals.
The IRFS634B_FP001 is special in that it has an extended drain-source capability as well as a low gate-threshold voltage and fast switching speed, making it suitable for a wide variety of applications. It is especially useful in applications where the drain-source voltage needs to remain high over time and the switching time needs to be reduced. These applications include power supplies, battery chargers, step-up converters, AC and DC motor drivers, H-bridges, and sonar systems.
The working principle of the IRFS634B_FP001 is based on the basic operation of all FETs. The drain-source channel forms an electric field between the two materials, which can be used to control the current flow. The gate terminal is then connected to a gate voltage, which contains an electric field that can attract or repel the electrons in the drain-source channel. This provides a control mechanism for current flow in the device.
When a positive gate voltage is applied, current will flow in the device. This is known as the “on” state. Conversely, when a negative gate voltage is applied, the device will enter the “off” state and no current will flow. Due to its fast switching speed and low gate-threshold voltage, the IRFS634B_FP001 can be used to control current flow in applications like DC-DC converters, power supplies, and motor drivers.
The IRFS634B_FP001 offers a number of other features that make it a great choice for a variety of applications. For instance, it is capable of over-voltage protection, which means that it will be able to manage any quick voltage spikes that might occur. Furthermore, it also offers a low on-resistance, which allows for better current handling capacity and power efficiency.
In summary, the IRFS634B_FP001 is an excellent choice for a wide range of applications due to its extended drain-source capability, low gate-threshold voltage, and fast switching speed. The device is capable of over-voltage protection and has a low on-resistance for improved current handling capacity. These features make the IRFS634B_FP001 an ideal choice for applications such as power supplies, battery chargers, step-up converters, AC and DC motor drivers, H-bridges, and sonar systems.
The specific data is subject to PDF, and the above content is for reference
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