| Allicdata Part #: | IRFS9N60ATRLPBFTR-ND |
| Manufacturer Part#: |
IRFS9N60ATRLPBF |
| Price: | $ 0.25 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 600V 9.2A D2PAK |
| More Detail: | N-Channel 600V 9.2A (Tc) 170W (Tc) Surface Mount D... |
| DataSheet: | IRFS9N60ATRLPBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.25000 |
| 10 +: | $ 0.24250 |
| 100 +: | $ 0.23750 |
| 1000 +: | $ 0.23250 |
| 10000 +: | $ 0.22500 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 170W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 49nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 750 mOhm @ 5.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 9.2A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The IRFS9N60ATRLPBF is a power MOSFET (metal-oxide-semiconductor field-effect transistor) used in a wide variety of applications. Power MOSFETs are commonly used in power electronics, contact-less switching of inductive loads, and high-side switch applications. The IRFS9N60ATRLPBF makes use of novel technologies to achieve high performance and increased efficiency. This article provides an overview of the IRFS9N60ATRLPBF’s application field and working principle.
The Application Field
The IRFS9N60ATRLPBF is a n-channel MOSFET ideal for use in power electronic circuits, especially ones that require high-frequency switching and high-current handling capabilities. It is used in a variety of applications, including motor controls, converters, power supplies, and lighting. The features of the IRFS9N60ATRLPBF enable it to achieve significant energy savings and performance enhancements.
The IRFS9N60ATRLPBF is designed for use as a high-frequency/high-speed switch. Its low ON resistance (RDS(on)) makes it well-suited for circuit designs requiring high-frequency operation and improved power efficiency. The device has a maximum operating temperature of 155°C, providing the operating flexibility needed for non-stop operation in harsh environments. Its low leakage current and reduced capacitance also make it particularly suitable for contactless design of inductive loads. Apart from these features, the IRFS9N60ATRLPBF also features over-current protection, a low profile design, and fast switching.
The Working Principle
The IRFS9N60ATRLPBF is a power MOSFET, which uses the MOSFET principle to regulate current flow. A MOSFET consists of two layers of semiconductor material separated by an insulating layer known as a gate oxide. When the gate voltage is applied to the gate terminal, it causes an electric field to be created between the gate and the source terminal, thus allowing current to flow from the source to the drain. The amount of current that can flow through the device is determined by the gate voltage, which is why MOSFETs are known as voltage-driven devices. The MOSFET also features a built-in body diode, which serves as a rectifier and protects the device against reverse voltage.
The IRFS9N60ATRLPBF is a n-channel MOSFET, which means that it is constructed with n-type semiconductor material. In n-channel MOSFETs, the current carrying channels are formed naturally between the n-type source and drain. Applying a positive voltage to the gate causes the level of charge carriers (electrons) in the channel to increase, thus creating a larger current path, and allowing more current to flow from the source to the drain. Applying a negative voltage to the gate reduces the channel current. This is why MOSFETs are known for their remarkable control of current flow.
Conclusion
The IRFS9N60ATRLPBF is a power MOSFET used in a variety of applications, including motor control, converters, power supplies, and lighting. Its low ON resistance and other features make it ideal for use in high-frequency and high-speed switching applications. The device is constructed with n-type semiconductor material and uses the MOSFET principle to regulate current flow. When the gate voltage is applied to the gate terminal, an electric field is created and current is allowed to flow between the source and the drain.
The specific data is subject to PDF, and the above content is for reference
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IRFS9N60ATRLPBF Datasheet/PDF