IRFS4615TRLPBF Allicdata Electronics
Allicdata Part #:

IRFS4615TRLPBFTR-ND

Manufacturer Part#:

IRFS4615TRLPBF

Price: $ 0.71
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 150V 33A D2PAK
More Detail: N-Channel 150V 33A (Tc) 144W (Tc) Surface Mount D2...
DataSheet: IRFS4615TRLPBF datasheetIRFS4615TRLPBF Datasheet/PDF
Quantity: 2400
1 +: $ 0.71000
10 +: $ 0.68870
100 +: $ 0.67450
1000 +: $ 0.66030
10000 +: $ 0.63900
Stock 2400Can Ship Immediately
$ 0.71
Specifications
Vgs(th) (Max) @ Id: 5V @ 100µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 144W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 42 mOhm @ 21A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The Infineon IRFS4615TRLPBF is a single N-channel power MOSFET designed for automotive and non-automotive applications. It can provide up to 120A of current and has a low on-state resistance of 8.5mΩ typ. The IRFS4615TRLPBF can withstand a peak Drain-Source voltage of 650 Volts and is suitable for any application requiring 10V Gate-Source voltage and up to 650V Drain-Source voltage.

The IRFS4615TRLPBF is built on a trench isolation technology that uses a tightly packed array of vertical n-channel MOSFETs to achieve optimal performance and power dissipation. This technology is beneficial for applications that require higher current routing capability, improved reliability, and fast switching speeds. The IRFS4615TRLPBF has a low input capacitance, allowing it to react faster to changes in Gate-Source voltage, reducing losses from capacitance and improving performance.

The IRFS4615TRLPBF is suitable for applications such as switching power supplies, DC-DC converters, DC motors, ignition systems and automotive relay drivers. It can be used in circuits with high switching frequencies, as it offers high frequency operation; up to 10kHz in the case of the IRFS4615TRLPBF. Furthermore, the IRFS4615TRLPBF has a high current handling capability, up to 120A, making it well-suited for high current applications.

The IRFS4615TRLPBF can also be used in Class B, Class D and Class T audio amplifiers, as well as in various other high voltage applications, such as plasma displays and liquid crystal displays. This power MOSFET can also be used in solar applications and in motor drive applications, such as those used in electric vehicles. It is also suitable for flyback power supplies and DC-DC converters.

The working principle of the IRFS4615TRLPBF is based on the N-channel MOSFET structure. When a positive voltage is applied to the Gate of the MOSFET, it creates an electric field between the Source and Drain terminals. This electric field creates an electron flow between the two terminals, providing electrical conduction. The voltage level applied to the Gate determines the amount of current that will flow through the device. As the applied voltage increases, the amount of current that can pass through the device also increases.

The IRFS4615TRLPBF is a popular choice in many different applications due to its low on-state resistance, high power handling capabilities and high frequency operation. It is also extremely reliable, thanks to its trench isolation technology and its long-term stability. Overall, the IRFS4615TRLPBF is an excellent choice for any application requiring high current switching, high frequency operation and high power dissipation.

The specific data is subject to PDF, and the above content is for reference

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