IRFS7730PBF

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IRFS7730PBF is a power field-effect transistor (FET) manufactured by International Rectifier Corporation. It is a type of an enhancement-type Metal-Oxide-Semiconductor FET (MOSFET). The IRFS7730PBF has a planar framework, comprises of silicon and composite gate oxides between the source and drain of a conductive epi substrate. It is housed in a TO-220 with cover for easy installation and packaging, and features very low gate drive power. IRFS7730PBF uses a direct current (DC) to operate and can be applied in the following applications: switch-mode converters, amplifiers, high-performance linear and switching applications.

IRFS7730PBF Features

• Low gate charge Qg
• Low drain-to-source output capacitance
• 100% avalanche tested
• Operating temperature range − 55°C to +150°C
• Very low on-state resistance

IRFS7730PBF Applications

IRFS7730PBF can be applied in a number of electronic systems. Some of the most common applications include:

Automotive

• Starter Motors
• Fuel Injectors
• Power Train
• Battery Management Systems

Industrial

• Power Conversion
• Motor Control
• Lighting Systems

Consumer Electronics

• Home Appliances
• Security Systems
• Audio/Video Equipments
• Telecommunication Devices

IRFS7730PBF Working Principle

The IRFS7730PBF utilizes an enhancement-type MOSFET, which is a type of field-effect transistor that works using a MOS gate. The MOS gate acts as a voltage-controlled switch by controlling the voltage applied to the gate terminal of the device. The MOSFET is usually composed of a single substrate or p- and n- type doped substrates. The gate of the device is connected to a gate controlling the current between the source and the drain. When a positive voltage is applied to the gate insulation, it changes the conductivity of the device, allowing current to flow across the device.

In an IRFS7730PBF, explicit gate driving is required for proper operation. A voltage higher than the threshold voltage of the FET is applied to the gate of the device, which causes it to open, thus conduction from the source to the drain occurs. The higher the gate voltage, the higher the current that can pass through the device. The output current is limited by the drain current, which is largely determined by the drain voltage, and the resistance of the device.

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