IRFS3507

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IRFS3507 is a single N-Channel power MOSFET commonly used in switching and linear applications. It is a type of Field Effect Transistor (FET) that works by controlling the conductivity of a channel between the source and drain terminals using an electric field. It is mainly used in switching and small-signal applications, and its main advantages include: low conduction loss, high switching frequency, and immunity to radiation.

The IRFS3507 is a vertical DMOS MOSFET device. It is usually used in switching and linear applications where its main benefits lie in its low on-state resistance, high switching speed, and low parasitic capacitance. This makes it ideal for power switching applications such as DC/DC converters, AC/DC converters, HV switching, welding, and other SMPS applications. In addition, its low gate threshold voltage makes it suitable for applications where fast switching is required.

The IRFS3507 has an on-state resistance of 2.1 ohms and a gate threshold voltage of 3.3 volts. The Gate-to-Source clamp voltage (Vgs) is -20V and the Gate-to-Source on-state resistance is 2.1 ohms. It has a reverse-blocking voltage rating of 350V and a continuous drain current rating of 20A. The device is rated at a maximum drain-source breakdown voltage of 600V and a maximum drain current of 57A. The maximum operation temperature of the device is 150°C.

The IRFS3507 operates in the depletion-mode, which means that it is normally off and needs a forward bias voltage applied to the gate in order to turn it on. When the gate-source voltage is applied, electrons are repelled from the substrate and this decreases the resistance between the source and the drain. As a result, the drain current increases and the device turns on. When the gate voltage is removed, the electrons will flow back to the substrate and the device will turn off. This action is known as the “reverse conducting effect”.

The IRFS3507 is a robust power MOSFET with a wide range of uses in switching and linear applications. It has excellent thermal characteristics and its low on-state resistance and high switching speed make it extremely efficient. Furthermore, its low gate threshold voltage allows for fast switching and its immunity to radiation makes it ideal for use in high-voltage environments. All of these features make the IRFS3507 an ideal choice for many different applications.

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