Allicdata Part #: | IRFSL3207-ND |
Manufacturer Part#: |
IRFSL3207 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 180A TO-262 |
More Detail: | N-Channel 75V 180A (Tc) 330W (Tc) Through Hole TO-... |
DataSheet: | IRFSL3207 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 330W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7600pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRFSL3207 is a single N-channel Power MOSFET of a vertical DPAK package type manufactured by International Rectifier. This type of MOSFET is designed to handle continuous drain current levels of up to 30 A, making it a robust and reliable power electronic component. It can also have a maximum voltage rating of -500 V, making it suitable for numerous applications in the areas of power conversion, motor control, and automotive electronics. With an increased level of performance efficiency and wide range of application, the IRFSL3207 is one of the best MOSFETs available in the market.
The IRFSL3207 is a single N-channel MOSFET, meaning it has only one channel and is capable of passing a negative current through it. This type of MOSFET has a planar construction, meaning the MOSFET chip is shaped like a flat plane. This makes it ideal for surface mounting, as its construction allows for the MOSFETs to be soldered onto a printed circuit board directly. The IRFSL3207 also features a built-in gate-source diode, which enables the internal protection of the MOSFET from overvoltage and cable transients. Furthermore, the integrated FETs even feature a low gate-source cap, making it suitable for high-frequency switching applications.
The main application of the IRFSL3207 lies in power conversion, motor control, and automotive electronics. This is due to its ability to handle continuous drain current levels of up to 30 A. Its high voltage rating also enables its use in high-voltage applications, the most notable one being the use of the MOSFET in DC-DC converters. The superior switching performance and relatively low on-state resistance also makes it suitable for variable frequency drives, as well as other applications in power electronics.
The working principle of the IRFSL3207 is quite simple, yet it produces very effective results. It consists of three main components; a gate, a source, and a drain. The gate is where a voltage signal is applied to control the flow of current through the MOSFET. The source is where the current enters the MOSFET, while the drain is where the current exits. The voltage across the source and the drain determines the current flow, with the higher voltage allowing for more current to flow. When a voltage signal is applied to the gate, it changes the electrical field in the channel between the source and the drain, allowing for more current to be passed through.
In conclusion, the IRFSL3207 is a robust and reliable power electronic component that is capable of handling continuous drain current levels of up to 30 A and voltage ratings of -500 V. Its excellent performance efficiency and wide range of applications makes it an ideal choice for numerous applications in the areas of power conversion, motor control, and automotive electronics. The working principle of the MOSFET is also quite simple, yet it produces great results.
The specific data is subject to PDF, and the above content is for reference
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