IRFZ48PBF Allicdata Electronics
Allicdata Part #:

IRFZ48PBF-ND

Manufacturer Part#:

IRFZ48PBF

Price: $ 2.47
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 50A TO-220AB
More Detail: N-Channel 60V 50A (Tc) 190W (Tc) Through Hole TO-2...
DataSheet: IRFZ48PBF datasheetIRFZ48PBF Datasheet/PDF
Quantity: 123
1 +: $ 2.24280
10 +: $ 2.02671
100 +: $ 1.62849
500 +: $ 1.26660
1000 +: $ 1.04948
Stock 123Can Ship Immediately
$ 2.47
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 190W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 18 mOhm @ 43A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRFZ48PBF is a N-channel MOSFET that is used in a variety of applications. This type of MOSFET is typically used to switch and control power, signals and other circuits. The IRFZ48PBF is often used for switching and large power supply circuits.

One application for the IRFZ48PBF is in solar inverters. This type of MOSFET can be used to switch the large power supply and control the solar controller. Another application is in automotive audio amplifiers. The IRFZ48PBF can switch the large power supply and provide safety for the audio system.

In general, MOSFETs are used in a variety of applications, but the IRFZ48PBF has several specific benefits that make it a preferred device in certain situations. The IRFZ48PBF has a very low on-resistance in comparison to other devices, and this gives it an advantage in high-current applications. In addition, the IRFZ48PBF has a very high breakdown voltage rating, which makes it ideal for use in high-voltage applications.

The IRFZ48PBF also has a low gate capacitance and low gate-source capacitance. This makes it ideal for use in very high-speed applications. In addition, the device has very good switching characteristics, which makes it suitable for use in high-speed switching applications such as computer power supplies.

The working principle of the IRFZ48PBF is based on the principle of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). It is a three-terminal device that has a gate, source and drain. The gate is used to control the flow of current between the source and drain. When the gate voltage is applied to the gate, it attracts electrons from the source and forms an inversion layer at the drain. This inversion layer acts as a barrier between the source and drain and controls the current flow.

When the drain is at a higher potential than the source, the gate voltage can be increased enough to overcome the barrier, allowing current to flow between the source and drain. The amount of current that can flow is controlled by the gate voltage, making the IRFZ48PBF an effective voltage control device.

The IRFZ48PBF is an ideal choice for a variety of switching and power supply applications. It has a low on-resistance, a high breakdown voltage rating and good switching characteristics, making it suitable for a variety of uses. It is especially useful in high-current and high-voltage applications and is also suitable for use in very high-speed applications.

The specific data is subject to PDF, and the above content is for reference

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