IRFZ20 Allicdata Electronics
Allicdata Part #:

IRFZ20-ND

Manufacturer Part#:

IRFZ20

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 50V 15A TO-220AB
More Detail: N-Channel 50V 15A (Tc) 40W (Tc) Through Hole TO-22...
DataSheet: IRFZ20 datasheetIRFZ20 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 50V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFZ20 is a small signal N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) used in a wide range of electronic applications. It is available in both through-hole (D2PAK) and surface mount (SOT-223) packages, and is commonly used for low-power voltage regulation and switching applications. The IRFZ20 can also be used in audio applications, such as amplifiers and preamps, and it is one of the most commonly used transistors in robotics projects.

N-Channel MOSFETs work by using a low level electrical signal sent to the gate of the MOSFET. This electrical signal creates an electrical field which then controls the flow of current between the Drain and Source pins. When the gate voltage rises to a certain level, the resistance between the Drain and Source pins drops significantly, allowing current to flow. When the gate voltage is reduced, the resistance between Drain and Source rises again, stopping the current flow.

The IRFZ20 has a low on-state resistance of 0.14 ohm and a maximum Drain to Source voltage (VDS) of 20V. It can handle a continuous drain current of up to 2.5A, with a maximum pulsed current of 10.8A. The gate threshold voltage is 4V, meaning that the gate voltage needs to be greater than 4V to open the MOSFET, allowing current to flow. The maximum power dissipation of the IRFZ20 is 4W, with a thermal resistance of 50°C/W.

The IRFZ20 can be used in a variety of different DC-DC converters and voltage regulators. It can be used to build a switching power supply, such as a buck converter, to convert a high voltage input into a low voltage output. It can also be used as an industry standard H-Bridge, which is used in robotics applications to control the direction of a DC motor. It can also be used as a switch to turn other devices ON or OFF, such as LED lights, in response to a control signal. The IRFZ20 is also popular in audio circuits such as amplifiers and pre-amps, where its ability to switch current with low on-state resistance is particularly useful.

The IRFZ20 is therefore a versatile and useful MOSFET which can be used in a variety of applications, from audio circuitry to voltage regulation. It is available in both packages, and can handle high currents while maintaining low on-state resistance. Its low gate threshold voltage also makes it useful for low voltage applications where the level of the control signal is limited.

The specific data is subject to PDF, and the above content is for reference

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