IRFZ30

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	74W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1600pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	50 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Drain to Source Voltage (Vdss):	50V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRFZ30 N-channel MOSFET is a high-speed, low Rds(on), low threshold voltage FET built on Advanced Process Technology. It is commonly used in various low-frequency switching applications such as DC converters, small motor control and audio amplifiers. This paper provides an overview of the IRFZ30 application field, structure, features and working principles. Application Field of IRFZ30The IRFZ30 can be used in a wide range of applications, including DC to DC converters, low frequency switching, motor control, audio amplifiers, etc. It offers high-speed switching capabilities with low gate-source impedance and low power dissipation. As a result, the IRFZ30 is ideal for a variety of low-frequency, low-power applications. DC to DC converters are used to convert DC signals from one voltage level to another. The IRFZ30 can be used to drive the MOSFET switches in an isolated DC-DC converter. The low switching speeds and low gate-source impedance of the IRFZ30 make it ideal for low-power DC-DC converters. The IRFZ30 is also used in motor control and audio amplifiers. It offers high-speed switching capability along with low power dissipation. As a result, it is well suited for low-frequency switching applications. The low output impedance of the IRFZ30 makes it well suited for audio amplifiers, allowing for dynamic sound reproduction with no distortion. Structure & Features of IRFZ30The IRFZ30 is an N-channel MOSFET with low gate charge and low output capacitance. It features an advanced process technology that provides high-speed switching capability and low Rds(on). The IRFZ30 is also able to operate at low gate-source voltage, allowing for efficient operation at lower gates voltages. The IRFZ30 also features an embedded body diode which allows it to quickly switch from one state to another. This makes it ideal for low-power DC-DC conversion applications. The IRFZ30 also offers a low-temperature coefficient and high stability. The low-temperature coefficient ensures that the IRFZ30 will operate reliably over a wide range of temperatures. Working Principle of IRFZ30The IRFZ30 works on the principle of transistor action. It uses a small amount of gate current to control the larger current flowing between the source and the drain. When gate current is applied, the MOSFET is switched on, allowing current to flow between the source and the drain. When the gate current is removed, the MOSFET is switched off, preventing current from flowing. The low gate-source impedance of the IRFZ30 allows for fast switching speeds. The low Rds(on) also allows for efficient operation at low voltages. The fast switching speeds and low Rds(on) of the IRFZ30 make it ideal for low-frequency switching applications. The embedded body diode in the IRFZ30 makes it ideal for DC-DC conversion applications. The body diode allows current to flow through the MOSFET when the gate current is removed, preventing overvoltage conditions. ConclusionThe IRFZ30 is an N-channel MOSFET with low gate charge and low output capacitance. It features an advanced process technology that provides high-speed switching capability and low Rds(on). The low gate-source impedance, low Rds(on) and embedded body diode make it ideal for a variety of low-current and low-frequency switching applications such as DC to DC converters, small motor control and audio amplifiers.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description