IRFZ44ES Allicdata Electronics
Allicdata Part #:

IRFZ44ES-ND

Manufacturer Part#:

IRFZ44ES

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 48A D2PAK
More Detail: N-Channel 60V 48A (Tc) 110W (Tc) Surface Mount D2P...
DataSheet: IRFZ44ES datasheetIRFZ44ES Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 23 mOhm @ 29A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFZ44ES is a N-Channel Field-Effect Transistor (FETs). It is a single-plated gold surface-mount package and is designed to dissipate power up to 25W. It is commonly used in RF power amplifiers and signal control applications that require high-frequency operation, low gate threshold voltage, and low on-state resistance. The IRFZ44ES is available in a wide range of threshold voltage ratings and can operate at frequencies up to 1GHZ.

The IRFZ44ES is a Vertical Diffused Metal Oxide Semiconductor field effect transistor (VDMOSFET). It is based on N-Channel depletion-mode FET and can be used in various types of circuits. Its main characteristics include high input impedance, high linearity and fast switching capabilities. It offers a low input capacitance and is suitable for RF and microwave applications. The IRFZ44ES is ideal for applications such as high power amplifiers, power converters, and load switches. It is also suitable for use in high-voltage, high-current circuits.

The IRFZ44ES works by controlling a voltage input to the gate of the transistor which then controls the current that flows through the device. The IRFZ44ES is different than the other types of FETs because it works on the principle of carrier-substrate injection. This type of FET uses minority carriers injected from the substrate and a series of voltage pulses to switch the current in the device. The injection of these minority carriers enables the device to switch faster and with a lower voltage input than other types of FETs. The IRFZ44ES has a higher operating temperature range than other types of FETs, which makes it an attractive choice for applications that require high power dissipation, such as RF power amplifiers.

In addition to RF power amplifier applications, the IRFZ44ES is also commonly used for many other types of circuit applications. It can be used to power logic circuits, voltage regulators, and audio amplifiers. It can also be used in some automotive applications, such as powering air-fuel monitors, electric power steering components, and oxygen sensors. The IRFZ44ES is a reliable device that can handle large amounts of current and is suitable for a wide variety of applications.

The IRFZ44ES is an important learning tool for students and hobbyists who want to understand the fundamentals of FETs and MOSFETs. It is a great way to gain experience in building circuits and provides a good opportunity to learn how to design and debug circuits. The IRFZ44ES offers a high level of performance and reliability and is an inexpensive way to get started with FETs and MOSFETs.

The specific data is subject to PDF, and the above content is for reference

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