IRFZ44S Allicdata Electronics
Allicdata Part #:

IRFZ44S-ND

Manufacturer Part#:

IRFZ44S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 50A D2PAK
More Detail: N-Channel 60V 50A (Tc) 3.7W (Ta), 150W (Tc) Surfac...
DataSheet: IRFZ44S datasheetIRFZ44S Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRFZ44S is a commonly used N-Channel enhancement mode field effect transistor (FET). It is a type of semiconductor device produced from a bulk material in which current is controlled by the application of an electric field. It is mainly used for power switching applications.

The IRFZ44S is an N-Channel enhancement mode field effect transistor (FET) with a maximum drain-source voltage rating of 60 volts and a continuous drain current rating of 44 amperes. It is mainly used for power switching applications. With its ultra-low on-resistance, the IRFZ44S can handle high currents while still maintaining efficient power management. It is used in a variety of applications such as batteries and adapters, power supplies, motor controls, automotive, etc.

The IRFZ44S is designed with a simple structure. It consists of four parts, namely the source, gate, drain, and body. The current flow in the device is controlled by the application of an electric field. When an appropriate voltage is applied to the gate, a channel is formed between the source and the drain and current begins to flow. The device is normally in the off state and when the gate voltage is increased, the channel is formed and the device is turned on.

The working principle of the IRFZ44S is based on two factors, the gate-source voltage, and the drain-source voltage. When a voltage is applied to the gate, a channel is formed in between the source and the drain. As a result, current will flow from the source to the drain. The gate-source voltage controls the width of the channel, thus allowing for precise control of the current flowing through the device. The drain-source voltage controls the amount of current that is allowed to flow, thus enabling efficient power management.

In summary, IRFZ44S is a commonly used N-Channel enhancement mode field effect transistor (FET). It is mainly used for power switching applications due to its ultra-low on-resistance and ability to handle high currents. It consists of four parts and works by the application of an electric field to the gate and controlling the width of the channel and current through the device. IRFZ44S is widely used in a variety of applications such as batteries and adapters, power supplies, motor controls, and automotive.

The specific data is subject to PDF, and the above content is for reference

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