IRFZ44SPBF Allicdata Electronics
Allicdata Part #:

IRFZ44SPBF-ND

Manufacturer Part#:

IRFZ44SPBF

Price: $ 2.22
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 50A D2PAK
More Detail: N-Channel 60V 50A (Tc) 3.7W (Ta), 150W (Tc) Surfac...
DataSheet: IRFZ44SPBF datasheetIRFZ44SPBF Datasheet/PDF
Quantity: 1000
1 +: $ 2.22000
10 +: $ 2.15340
100 +: $ 2.10900
1000 +: $ 2.06460
10000 +: $ 1.99800
Stock 1000Can Ship Immediately
$ 2.22
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IFRZ44SPBF is a state of the art semiconductor device and belongs to the category of field effect transistors (FETs). In particular, it is a single MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) and is widely used in a variety of applications in the electronics industry.

A MOSFET is a type of transistor that works on the principle of a semiconductor action composed of metal and an oxide layer. It is considered to be one of the most important components in modern electronics and plays a major role in the development of a variety of products. In the case of the IFRZ44SPBF, this device has four terminals (drain, gate, source, and body) and works on the principle of voltage-controlled current flow.

The IFRZ44SPBF is best suited for applications where either a low input of current or a high output of current is desired. This is due to its exceptional attributes of low input capacitance and high output current limit. It offers a high power-efficiency level and is capable of switching very quickly. This makes it ideal for use in power electronics applications such as power amplifiers, switched-mode power supplies, and motor control.

As for working principle, the device works on the basis of the field-effect phenomenon. This is when a potential difference is applied across a gate structure and results in a change of the input current at the drain terminal. This is then amplified into intense output current. In the case of the IFRZ44SPBF, this is achieved through the application of a reverse-biased gate-source voltage. This generates a channel of electrons that flow from the source to the drain.

The IFRZ44SPBF also offers applications in signal amplification, signal conditioning, and data transmission. In a signal conditioning application, it is used to convert an analog signal into a digital one. It is also used in digital signal-processing (DSP) applications, where it is used to amplify a signal. In the case of data transmission, it is used to drive larger currents in order to signal data between devices. It is also used as a switch in a circuitry system, as it can switch off under certain conditions.

The IFRZ44SPBF is a versatile semiconductor device that is considered to be a workhorse in the electronics industry. It is used in a wide range of applications, from low-power to high-power applications, from signal conditioning to data transmission. It works on the principle of the field-effect phenomenon, where a reverse-biased gate-source voltage creates a channel of electrons to flow from the source to the drain. Its versatility, power efficiency and quick switching capabilities make it a popular choice for many electronic applications.

The specific data is subject to PDF, and the above content is for reference

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