| Allicdata Part #: | IRFZ44SPBF-ND |
| Manufacturer Part#: |
IRFZ44SPBF |
| Price: | $ 2.22 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 60V 50A D2PAK |
| More Detail: | N-Channel 60V 50A (Tc) 3.7W (Ta), 150W (Tc) Surfac... |
| DataSheet: | IRFZ44SPBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 2.22000 |
| 10 +: | $ 2.15340 |
| 100 +: | $ 2.10900 |
| 1000 +: | $ 2.06460 |
| 10000 +: | $ 1.99800 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.7W (Ta), 150W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 67nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 28 mOhm @ 31A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The IFRZ44SPBF is a state of the art semiconductor device and belongs to the category of field effect transistors (FETs). In particular, it is a single MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) and is widely used in a variety of applications in the electronics industry.
A MOSFET is a type of transistor that works on the principle of a semiconductor action composed of metal and an oxide layer. It is considered to be one of the most important components in modern electronics and plays a major role in the development of a variety of products. In the case of the IFRZ44SPBF, this device has four terminals (drain, gate, source, and body) and works on the principle of voltage-controlled current flow.
The IFRZ44SPBF is best suited for applications where either a low input of current or a high output of current is desired. This is due to its exceptional attributes of low input capacitance and high output current limit. It offers a high power-efficiency level and is capable of switching very quickly. This makes it ideal for use in power electronics applications such as power amplifiers, switched-mode power supplies, and motor control.
As for working principle, the device works on the basis of the field-effect phenomenon. This is when a potential difference is applied across a gate structure and results in a change of the input current at the drain terminal. This is then amplified into intense output current. In the case of the IFRZ44SPBF, this is achieved through the application of a reverse-biased gate-source voltage. This generates a channel of electrons that flow from the source to the drain.
The IFRZ44SPBF also offers applications in signal amplification, signal conditioning, and data transmission. In a signal conditioning application, it is used to convert an analog signal into a digital one. It is also used in digital signal-processing (DSP) applications, where it is used to amplify a signal. In the case of data transmission, it is used to drive larger currents in order to signal data between devices. It is also used as a switch in a circuitry system, as it can switch off under certain conditions.
The IFRZ44SPBF is a versatile semiconductor device that is considered to be a workhorse in the electronics industry. It is used in a wide range of applications, from low-power to high-power applications, from signal conditioning to data transmission. It works on the principle of the field-effect phenomenon, where a reverse-biased gate-source voltage creates a channel of electrons to flow from the source to the drain. Its versatility, power efficiency and quick switching capabilities make it a popular choice for many electronic applications.
The specific data is subject to PDF, and the above content is for reference
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IRFZ44SPBF Datasheet/PDF