Allicdata Part #: | IRL2203NL-ND |
Manufacturer Part#: |
IRL2203NL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 116A TO-262 |
More Detail: | N-Channel 30V 116A (Tc) 3.8W (Ta), 180W (Tc) Throu... |
DataSheet: | IRL2203NL Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 180W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3290pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 116A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRL2203NL is a single N-Channel enhancement mode transistor designed for high-side switching applications, such as switching motor circuits, heating elements, and other high power applications. It features an on-state drain-source voltage maximum of 60V, as well as an on-state resistance maximum of 0.3 ohms. The transistor offers a rugged construction that allows for a high current capability of up to 15A.
The IRL2203NL has a maximum drain-source breakdown voltage of 200V and has an optimized low threshold voltage capable of handling up to -2V. This transistor is also protected by a zener diode connected between the gate terminal and the source terminal. The zener diode helps to prevent the gate voltage from exceeding the maximum ratings of the transistor.
The IRL2203NL has many applications in the field of motor switching, amplifier circuits, and switching devices. As a high-side switch, the transistor can be used to control the flow of current across a load. This can be especially helpful in motor switching applications, where the high side switch can be used to turn the motor on or off depending on the need.
The IRL2203NL features an N-channel enhancement mode field-effect transistor with a gate threshold voltage of -2V. This type of transistor uses positive voltage on the gate terminal in order to increase the conductivity of the channel. The drain-source voltage and the current determine the resistivity of the channel, thus controlling how much current can flow through it. The gate-source voltage can be used to control the current flow more precisely.
When used in combination with a load, the IRL2203NL can be used to design a switch that will alternate between an ON and OFF state. The voltage on the gate terminal is used to regulate the current flow through the circuit. When the voltage on the gate terminal is high enough, it will cause the transistor to switch from the OFF state to the ON state.
The IRL2203NL can also be used in amplifier circuits to act as a switch between an active output device and an inactive output device. By using two transistors in series, one in the ON state and the other in the OFF state, the amplifier can select the desired active output device. This can be used to switch between different speakers or amplifiers without having to adjust the gain setting on each one manually.
Overall, the IRL2203NL is a high-side switching transistor that is highly versatile in its application field and offers a rugged construction capable of handling up to 15A of current. It has an optimized low threshold voltage allowing for operation at -2V, as well as a maximum drain-source breakdown voltage of 200V. This transistor can be used in motor and amplifier circuits, as well as in other high power applications.
The specific data is subject to PDF, and the above content is for reference
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