IRL2703STRL

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	45W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	450pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	40 mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	24A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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IRL2703STRL is a type of shielded P-Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It is a modernday semiconductor device used mainly in the field of power electronics to control and regulate the flow of power. It serves a wide range of applications which include switching, amplifying, voltage regulation as well as power conversion. This article seeks to discuss the application field and working principle of IRL2703STRL MOSFET.IRL2703STRL Application FieldThe IRL2703STRL MOSFET is normally employed in power conversion applications such as switching power sources, load controllers, and motor controllers. This device is particularly effective in controlling high-power equipment like pumps, fans, and other high-power electronic items. To illustrate, IRL2703STRL MOSFETs can be found in the circuit design of numerous electric vehicles, robots, and drones.This type of MOSFET is also suitable for various industrial applications such as heater/cooler controllers, solar cell applications, and digital amplifier applications. Besides, IRL2703STRL devices are efficient for applications related to lighting control, battery protection, and mobile device charging control systems. This type of MOSFET is the preferred choice for its excellent performance at high power gains.IRL2703STRL Working PrincipleThe IRL2703STRL MOSFET works on the principle of a metal-oxide-silicon (MOS) transistor operated with a gate voltage. To be specific, the MOSFET features a conduction channel between its source and drain electrodes which is controlled by its gate voltage. This can be likened to a sheet of Si3N4 covering the MOSFET\'s source and drain terminal, except that its gate voltage can alter the resistance between the source and drain.During operation, a positively charged voltage is applied to the gate terminal to open the conduction channel. This process allows a current to flow between the source and drain terminals and the MOSFET is activated. As such, the IRL2703STRL MOSFET is said to be in ‘ON’ state and it can then be used to control the flow of the current. By reversing the gate voltage, the MOSFET can be switched back to its ‘OFF’ state and the current between the source and drain will cease.One of the key advantages of the IRL2703STRL MOSFET is its enhanced thermal performance. This device is housed in a shielded package, which helps in improving its thermal characteristics by at least 50%. This functionality is important as it ensures that the device is able to withstand sustained high temperatures during operations.ConclusionIn conclusion, the IRL2703STRL MOSFET is a type of powerful and reliable shielded P-Channel MOSFET that has demonstrated its effectiveness in a wide range of power conversion applications. The device operates on the principle of a MOSFET controlled by gate voltage and is known to provide excellent performance at high power gains. Additionally, it comes equipped with a shielded package which enhances its thermal performance.

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