IRL2203NSTRLPBF Allicdata Electronics

IRL2203NSTRLPBF Discrete Semiconductor Products

Allicdata Part #:

IRL2203NSTRLPBFTR-ND

Manufacturer Part#:

IRL2203NSTRLPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 116A D2PAK
More Detail: N-Channel 30V 116A (Tc) 3.8W (Ta), 180W (Tc) Surfa...
DataSheet: IRL2203NSTRLPBF datasheetIRL2203NSTRLPBF Datasheet/PDF
Quantity: 800
Stock 800Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 180W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRL2203NSTRLPBF is a single N-Channel (enhancement mode) MOSFET transistor designed and manufactured by Infineon Technologies. It is a low-voltage, low-power surface-mount Power MOSFET designed for use in high voltage switching applications. The device features a high power rating, low on-resistance, and a low threshold voltage. This device is primarily used in the area of audio amplifiers, power supplies, and relay drivers.

IRL2203NSTRLPBF is well suited for applications such as power converters, power supplies, DC/DC converters, motor drives, audio amplifiers, and other switching or linear applications. The device also has very low-output capacitance, which makes it ideal for high-frequency applications. Its low on-resistance and low threshold voltage make it very effective for high-speed switching. Furthermore, the MOSFET has a high maximum voltage rating of 80V and a drain current of 6A at temperatures below 55°C.

The main components of IRL2203NSTRLPBF are two N-channel MOSFETs, two Schottky diode junctions, an internal gate-drive circuit and a ceramic die. The device operates on a single 3.3V/1V supply and has an input voltage of up to 30V. The internal gate-drive circuit provides a guaranteed output current of up to 24A and a maximum switching frequency of 400KHz. The device also has a maximum drain-to-source withstand voltage of 25V and a threshold voltage of 3.3V.

At the heart of IRL2203NSTRLPBF is the basic principle of MOSFET technology. MOSFET stands for Metal-Oxide-Semiconductor Field-Effect Transistor. This type of transistor is comprised of four terminals, usually, the drain, gate, source, and body. The gate and source terminals are used to control the flow of electrical charge. The main feature of this type of transistor is its ability to be turned on and off very quickly, and its extremely low on-resistance.

The working principle of IRL2203NSTRLPBF is simple and straightforward. When a voltage is applied to the Gate terminal, a current is induced in the N-Channel MOSFET, which increases its conductivity. This allows for a current to flow through the device from the Source to the Drain terminal. When the voltage applied to the Gate is removed, the device will turn off. This transistor is widely used in switch-mode power supplies, DC/DC converters, and motor drives.

Overall, the IRL2203NSTRLPBF is a well-suited device for many different applications due to its low-power, low-voltage, and high-power rating. It has a wide range of operating temperatures and is well-suited for high-speed switching. Its low on-resistance and low threshold voltage make it ideal for high-frequency applications. Its low output capacitance makes it ideal for many high-frequency applications as well. Its wide range of voltage and drain current ratings make it applicable to many different switching or linear applications.

The specific data is subject to PDF, and the above content is for reference

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