IRL2505STRL Allicdata Electronics
Allicdata Part #:

IRL2505STRL-ND

Manufacturer Part#:

IRL2505STRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 104A D2PAK
More Detail: N-Channel 55V 104A (Tc) 3.8W (Ta), 200W (Tc) Surfa...
DataSheet: IRL2505STRL datasheetIRL2505STRL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 8 mOhm @ 54A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRF2505STRL is a single-channel, N-channel, Enhancement Mode, Field-Effect Transistor (FET) that is manufactured by international Rectifier (IR). This transistor is specifically designed to handle high-current applications, especially those that involve high-power power amplifier circuits. The IRF2505STRL has a single gate, with a maximum voltage of 200 volts, and a current handling capacity of 35 amps.

Field-effect transistors are semiconductor devices which operate on the principle of controlling a “current” by applying a voltage across a “gate” and “source” terminal. A single channel, N-channel Enhancement Mode FET is basically a three-terminal device that is usually used to amplify signals or provide an arrangement for switching applications. The IRF2505STRL, being an N-Channel Enhancement Mode FET, also works on the same principles.

The IRF2505STRL offers unmatched performance when it comes to switching applications, especially in high-current applications. Its high-current capacity of 35 amp is its most attractive feature, which means that it can handle higher currents compared to other similar transistors. It also has a low gate-threshold voltage, which makes it easy to control and operate. Additionally, the on-resistance of the device is just 0.005 ohms, which makes it very efficient in terms of power dissipation.

The IRF2505STRL also has a low input capacitance and high transconductance, which makes it very useful in high-gain, frequency-sensitive applications. It can be used to design circuits with an efficiency higher than 80 percent. This is important in many applications where high levels of efficiency are desired. Furthermore, the package of the IRF2505STRL is designed for space efficiency and can be mounted on different boards without occupying too much space.

Apart from high-current applications, the IRF2505STRL is also used in motor speed control applications where the high current and low gate threshold voltage comes in handy. In addition, this transistor is also used in high-voltage gate driving circuits, where its high-voltage and low gate threshold voltage come in handy. It has also been used in high-frequency switching applications, where its high-frequency performance is helpful. Furthermore, the low gate-threshold voltage and low input capacitance make it ideal for switching applications where high efficiency is desired.

In conclusion, the IRF2505STRL is a single-channel, N-Channel, Enhancement Mode, Field-Effect Transistor (FET) with high-current application capabilities and a low gate-threshold voltage. It offers many advantages in high-current applications and high-frequency switching applications. The package of the IRF2505STRL is designed for space efficiency, which makes it ideal for mounting on different boards. It has been used in various applications such as motor speed control, high-voltage gate driving, and high-frequency switching, where its performance and features can be beneficial.

The specific data is subject to PDF, and the above content is for reference

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