Allicdata Part #: | IRL2505STRL-ND |
Manufacturer Part#: |
IRL2505STRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 104A D2PAK |
More Detail: | N-Channel 55V 104A (Tc) 3.8W (Ta), 200W (Tc) Surfa... |
DataSheet: | IRL2505STRL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5000pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 54A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 104A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRF2505STRL is a single-channel, N-channel, Enhancement Mode, Field-Effect Transistor (FET) that is manufactured by international Rectifier (IR). This transistor is specifically designed to handle high-current applications, especially those that involve high-power power amplifier circuits. The IRF2505STRL has a single gate, with a maximum voltage of 200 volts, and a current handling capacity of 35 amps.
Field-effect transistors are semiconductor devices which operate on the principle of controlling a “current” by applying a voltage across a “gate” and “source” terminal. A single channel, N-channel Enhancement Mode FET is basically a three-terminal device that is usually used to amplify signals or provide an arrangement for switching applications. The IRF2505STRL, being an N-Channel Enhancement Mode FET, also works on the same principles.
The IRF2505STRL offers unmatched performance when it comes to switching applications, especially in high-current applications. Its high-current capacity of 35 amp is its most attractive feature, which means that it can handle higher currents compared to other similar transistors. It also has a low gate-threshold voltage, which makes it easy to control and operate. Additionally, the on-resistance of the device is just 0.005 ohms, which makes it very efficient in terms of power dissipation.
The IRF2505STRL also has a low input capacitance and high transconductance, which makes it very useful in high-gain, frequency-sensitive applications. It can be used to design circuits with an efficiency higher than 80 percent. This is important in many applications where high levels of efficiency are desired. Furthermore, the package of the IRF2505STRL is designed for space efficiency and can be mounted on different boards without occupying too much space.
Apart from high-current applications, the IRF2505STRL is also used in motor speed control applications where the high current and low gate threshold voltage comes in handy. In addition, this transistor is also used in high-voltage gate driving circuits, where its high-voltage and low gate threshold voltage come in handy. It has also been used in high-frequency switching applications, where its high-frequency performance is helpful. Furthermore, the low gate-threshold voltage and low input capacitance make it ideal for switching applications where high efficiency is desired.
In conclusion, the IRF2505STRL is a single-channel, N-Channel, Enhancement Mode, Field-Effect Transistor (FET) with high-current application capabilities and a low gate-threshold voltage. It offers many advantages in high-current applications and high-frequency switching applications. The package of the IRF2505STRL is designed for space efficiency, which makes it ideal for mounting on different boards. It has been used in various applications such as motor speed control, high-voltage gate driving, and high-frequency switching, where its performance and features can be beneficial.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IRL2505S | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 104A D2PA... |
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IRL2505L | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 104A TO-2... |
IRL2910L | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 55A TO-2... |
IRL2203NSTRRPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 116A D2PA... |
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IRL2203STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 100A D2PA... |
IRL2203STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 100A D2PA... |
IRL2505STRL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 104A D2PA... |
IRL2505STRR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 104A D2PA... |
IRL2703STRL | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 24A D2PAK... |
IRL2703STRR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 24A D2PAK... |
IRL2910STRL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 55A D2PA... |
IRL2703SPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 24A D2PAK... |
IRL2203NSPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 116A D2PA... |
IRL2910SPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 55A D2PA... |
IRL2505SPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 104A D2PA... |
IRL2203NLPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 116A TO-2... |
IRL2505STRRPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 104A D2PA... |
IRL2203NPBF | Infineon Tec... | -- | 1686 | MOSFET N-CH 30V 116A TO-2... |
IRL2505PBF | Infineon Tec... | -- | 3210 | MOSFET N-CH 55V 104A TO-2... |
IRL2505STRLPBF | Infineon Tec... | -- | 800 | MOSFET N-CH 55V 104A D2PA... |
IRL2203NSTRLPBF | Infineon Tec... | -- | 800 | MOSFET N-CH 30V 116A D2PA... |
IRL2910STRLPBF | Infineon Tec... | -- | 800 | MOSFET N-CH 100V 55A D2PA... |
IRL2703PBF | Infineon Tec... | -- | 4580 | MOSFET N-CH 30V 24A TO-22... |
IRL2910PBF | Infineon Tec... | -- | 9263 | MOSFET N-CH 100V 55A TO-2... |
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