IRL2505STRRPBF

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The IRL2505PBF is a very popular n-channel MOSFET (metal–oxide–semiconductor field-effect transistor) ideally suited for use as a low-side switch in a variety of applications. It is capable of switching high currents and voltages with a low on-state resistance, making it a suitable choice for a wide variety of power drive applications. This article will provide an overview of the IRL2505PBF, including its application fields and working principle.

IRL2505PBF Application Fields

The IRL2505PBF is a rugged, robust power MOSFET with a low absolute maximum rating of 80V and a continuous drain-source voltage (VDS) of 55V. This enhanced power MOSFET features n-channel enhancement-mode logic-level, Low Rdson, and high-side/low-side capabilities. Due to its low on-state resistance, it can deliver up to 5A of current, making it an ideal choice for a wide range of applications.

Applications for the IRL2505PBF include, but are not limited to, battery powered systems, low-voltage switching, synchronous rectifiers, power distribution and multi-cell Li-Ion/Li-Polymer battery systems. It is also well suited to be used in power supplies, DC/DC converters, auxiliary power supplies, audio amplifiers, and motor drivers.

Due to its low on-state resistance and high current capability, the IRL2505PBF is an excellent choice for designs where low power dissipation and low junction temperature are a priority. This can be especially beneficial in battery-based systems, where the power efficiency of the system is critical.

IRL2505PBF Working Principle

The working principle of the IRL2505PBF is quite simple. It uses intrinsic body-drain p-n junction regions that are formed from the n+ source (S) and p+ drain (D) regions. A floating gate is situated between these regions which controls the on-resistance of the transistor. When a positive voltage is applied to the gate, electrons are attracted to the gate and the resistance between the source and the drain decreases, allowing current to flow.

The voltage at the gate determines the conductivity of the transistor. If the gate voltage (VGS) is greater than the threshold voltage (VTH) specified in the data sheet, then the transistor will be in its ‘on’ state, allowing current to flow freely between the source and drain. If the gate voltage is less than the threshold voltage, then the transistor will be in its ‘off’ state, and current will not be able to flow freely between the source and drain.

The IRL2505PBF is designed to switch very quickly, with a maximum turnaround time of 27nS. This makes it suitable for switching high-speed applications, such as audio amplifiers. Its very low input capacitance makes this device an excellent choice for both low and high frequency applications. Additionally, it is RoHS compliant and halogen free, making it a great choice for environmental applications.

Conclusion

The IRL2505PBF is an excellent choice for low-voltage switching, synchronous rectifiers, battery powered systems, and auxiliary power supplies. Its low on-state resistance, high current capability, and quick switching speed make it a great choice for a variety of applications. Additionally, its low input capacitance and RoHS/halogen-free compliance make it an excellent choice for power-sensitive, environmentally conscious designs.

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